The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices
Abstract
Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed single-crystal InAs cores with epitaxial InP shells 2-3 nm in thickness, and energy-dispersive X-ray spectroscopy analysis further confirmed the composition of the designed heterostructure. Room-temperature electrical measurements on InAs/InP NW field-effect transistors (NWFETs) showed significant improvement in the on-current and transconductance compared to InAs NWFETs fabricated in parallel, with a room-temperature electron mobility, 11,500 cm(2)/Vs, substantially higher than other synthesized 1D nanostructures. In addition, NWFET devices configured with integral high dielectric constant gate oxide and top-gate structure yielded scaled on-currents up to 3.2 mA/microm, which are larger than values reported for other n-channel FETs. The design and realization of high electron mobility InAs/InP NWs extends our toolbox of nanoscale building blocks and opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.
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Citations
Cites
Growth of nanowire superlattice structures for nanoscale photonics and electronics
Gudiksen, M. S., Lauhon, L. J., Wang, J., Smith, D. C., & Lieber, C. M. (2002) · Nature · doi:10.1038/415617a · Cited by 2,709
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Cited by
Nanowire Electronics: From Nanoscale to Macroscale
Jia, C., Lin, Z., Huang, Y., & Duan, X. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00164 · Cited by 373
Synthesis and Applications of III–V Nanowires
Barrigón, E., Heurlin, M., Bi, Z., Monemar, B., & Samuelson, L. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00075 · Cited by 328
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Joyce, H. J., Docherty, C. J., Gao, Q., Tan, H. H., Jagadish, C., Lloyd-Hughes, J., Herz, L. M., & Johnston, M. B. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/21/214006 · Cited by 300
Strong Terahertz Emission and Its Origin from Catalyst-Free InAs Nanowire Arrays
Arlauskas, A., Treu, J., Saller, K., Beleckaitė, I., Koblmüller, G., & Krotkus, A. (2014) · Nano Letters · doi:10.1021/nl404737r · Cited by 40
Metadata
- Authors
- Jiang, X., Xiong, Q., Nam, S., Qian, F., Li, Y., & Lieber, C. M.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2007-09-15
- Volume
- 7
- Issue
- 10
- Pages
- 3214-3218
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2098053836
- Cited by
- 387
- References
- 1
- FWCI
- 20.57
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jiang, X., Xiong, Q., Nam, S., Qian, F., Li, Y., & Lieber, C. M. (2007). InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices. Nano Letters. https://doi.org/10.1021/nl072024a
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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