Strong Terahertz Emission and Its Origin from Catalyst-Free InAs Nanowire Arrays
Abstract
The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are expected to play a key role in the development of very efficient semiconductor surface emitters in the terahertz (THz) spectral range. Here, we report on optically excited THz emission from catalyst-free grown arrays of intrinsically n-type InAs NWs using THz time-domain spectroscopy. Depending on the aspect ratio, the THz emission efficiency of the n-type InAs NWs is found to be up to ∼3 times stronger than that of bulk p-type InAs, known as currently the most efficient semiconductor-based THz surface emitter. Characteristic differences from bulk p-type InAs are particularly revealed from excitation wavelength-dependent measurements, showing monotonously increasing THz pulse amplitude in the NW arrays with increasing photon energy. Further polarization-dependent and two-color pump-probe experiments elucidate the physical mechanism of the THz emission: In contrast to bulk p-type InAs, where the anisotropic photoconductivity in the surface electric field is the dominant cause for THz pulse generation, the origin of the intrinsic THz emission in the NWs is based on the photo-Dember effect. The strong THz emission from high aspect ratio NW arrays further suggests an improved out-coupling of the radiation, while further enhancements in efficiency using core-shell NW geometries are discussed.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
The photo-Dember effect arising from unequal electron-hole diffusion rates is a common source of charge currents in nanowires, often in addition to or in competition with junction fields, depending on doping type.
“The photo-Dember effect arising from unequal electron-hole diffusion rates is a common source of charge currents in nanowires31,222–224, often in addition to or in competition with junction fields221,222, depending on doping type.”
From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [224]
Cites
Mittleman, D. M., Jacobsen, R. H., & Nuss, M. C. (1996) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/2944.571768 · Cited by 813 · see citing works
Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics
Zhang, X.-C., & Auston, D. H. (1992) · Journal of Applied Physics · doi:10.1063/1.350710 · Cited by 427 · see citing works
InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices
Jiang, X., Xiong, Q., Nam, S., et al. (2007) · Nano Letters · doi:10.1021/nl072024a · Cited by 389 · see citing works
Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
Noguchi, M., Hirakawa, K., & Ikoma, T. (1991) · Physical Review Letters · doi:10.1103/physrevlett.66.2243 · Cited by 268 · see citing works
Sarukura, N., Ohtake, H., IZUMIDA, S., et al. (1998) · Journal of Applied Physics · doi:10.1063/1.368068 · Cited by 265 · see citing works
Fermi Level Position at Semiconductor Surfaces
Mead, C., & Spitzer, W. G. (1963) · Physical Review Letters · doi:10.1103/physrevlett.10.471 · Cited by 203 · see citing works
Hertenberger, S., Rudolph, D., Bichler, M., et al. (2010) · Journal of Applied Physics · doi:10.1063/1.3525610 · Cited by 166 · see citing works
Improved Subthreshold Slope in an InAs Nanowire Heterostructure Field-Effect Transistor
Lind, E., Persson, A. I., Samuelson, L., et al. (2006) · Nano Letters · doi:10.1021/nl052468b · Cited by 142 · see citing works
Semiconductors for terahertz photonics applications
Krotkus, A. (2010) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/43/27/273001 · Cited by 124 · see citing works
Self-citationReid, M., Cravetchi, I. V., & Fedosejevs, R. (2005) · Physical Review B · doi:10.1103/physrevb.72.035201 · Cited by 119 · see citing works
Surface passivated InAs/InP core/shell nanowires
TILBURG, J. W. W. V., Algra, R. E., Immink, W. G. G., et al. (2010) · Semiconductor Science and Technology · doi:10.1088/0268-1242/25/2/024011 · Cited by 110 · see citing works
Transport coefficients of InAs epilayers
Wieder, H. H. (1974) · Applied Physics Letters · doi:10.1063/1.1655441 · Cited by 102 · see citing works
Terahertz emission from black silicon
Hoyer, P., Theuer, M., Beigang, R., & Kley, E. ‐. (2008) · Applied Physics Letters · doi:10.1063/1.2978096 · Cited by 101 · see citing works
Terahertz emission from p-lnAs due to the instantaneous polarization
Adomavičius, R., Urbanowicz, A., Molis, G., Krotkus, A., & Šatkovskis, E. (2004) · Applied Physics Letters · doi:10.1063/1.1795980 · Cited by 92 · see citing works
Self-citationGrowth and properties of InGaAs nanowires on silicon
Koblmüller, G., & Abstreiter, G. (2013) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.201308207 · Cited by 88 · see citing works
Self-citationEfficient terahertz emission from InAs nanowires
Seletskiy, D. V., Hasselbeck, M. P., Cederberg, J. G., Katzenmeyer, A., Toimil-Molares, M. E., Léonard, F., Talin, A. A., & Sheik-Bahae, M. (2011) · Physical Review B · doi:10.1103/physrevb.84.115421 · Cited by 81 · see citing works
THz emission from semiconductor surfaces
Malevich, V. L., Adomavičius, R., & Krotkus, A. (2008) · Comptes Rendus Physique · doi:10.1016/j.crhy.2007.09.014 · Cited by 79 · see citing works
Self-citationEnhanced Luminescence Properties of InAs–InAsP Core–Shell Nanowires
Treu, J., Bormann, M., Schmeiduch, H., et al. (2013) · Nano Letters · doi:10.1021/nl403341x · Cited by 78 · see citing works
Self-citationRemote p-Doping of InAs Nanowires
Li, H., Wunnicke, O., Borgström, M. T., et al. (2007) · Nano Letters · doi:10.1021/nl0627487 · Cited by 76 · see citing works
Transport Coefficients of InAs Nanowires as a Function of Diameter
Dayeh, S. A., Yu, E. T., & Wang, D. (2008) · Small · doi:10.1002/smll.200800969 · Cited by 70 · see citing works
Spectrum and polarization of hot-electron photoluminescence in semiconductors
Zakharchenya, B. P., Mirlin, D. N., Perel, V. I., et al. (1982) · Uspekhi Fizicheskih Nauk · doi:10.3367/ufnr.0136.198203d.0459 · Cited by 69 · see citing works
High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
Hertenberger, S., Funk, S., Vizbaras, K., et al. (2012) · Applied Physics Letters · doi:10.1063/1.4738769 · Cited by 58 · see citing works
Terahertz emission from vertically aligned InN nanorod arrays
Ahn, H., Ku, Y.-P., Wang, Y.-C., Chuang, C.-H., Gwo, S., & Pan, C.-L. (2007) · Applied Physics Letters · doi:10.1063/1.2789183 · Cited by 57 · see citing works
Morkötter, S., Funk, S., Liang, M., et al. (2013) · Physical Review B · doi:10.1103/physrevb.87.205303 · Cited by 52 · see citing works
Spectral dependencies of terahertz emission from InAs and InSb
Adomavičius, R., Molis, G., Krotkus, A., & Sirutkaitis, V. (2005) · Applied Physics Letters · doi:10.1063/1.2143111 · Cited by 51 · see citing works
Self-citationGeometry-dependent terahertz emission of silicon nanowires
Jung, G. B., Cho, Y. J., Myung, Y., Kim, H. S., Seo, Y. S., Park, J., & Kang, C. (2010) · Optics Express · doi:10.1364/oe.18.016353 · Cited by 48 · see citing works
Yang, T., Hertenberger, S., Morkötter, S., et al. (2012) · Applied Physics Letters · doi:10.1063/1.4768001 · Cited by 46 · see citing works
THz excitation spectra of AIIIBV semiconductors
Arlauskas, A., & Krotkus, A. (2012) · Semiconductor Science and Technology · doi:10.1088/0268-1242/27/11/115015 · Cited by 43 · see citing works
Self-citationE1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering
Zardo, I., Yazji, S., Hörmann, N. G., et al. (2013) · Nano Letters · doi:10.1021/nl304528j · Cited by 33 · see citing works
Terahertz emission from cubic semiconductor induced by a transient anisotropic photocurrent
Malevich, V. L., Ziaziulia, P. A., Adomavičius, R., Krotkus, A., & Malevich, Y. (2012) · Journal of Applied Physics · doi:10.1063/1.4758181 · Cited by 32 · see citing works
Self-citationUltrafast photocurrents and THz generation in single InAs‐nanowires
Erhard, N., Seifert, P., Prechtel, L., Hertenberger, S., Karl, H., Abstreiter, G., Koblmüller, G., & Holleitner, A. W. (2013) · Annalen der Physik · doi:10.1002/andp.201200181 · Cited by 30 · see citing works
Self-citationIbañes, J. J., Balgos, M. H., Jaculbia, R., Salvador, A. A., Somintac, A. S., Estacio, E. S., Que, C. T., Tsuzuki, S., Yamamoto, K., & Tani, M. (2013) · Applied Physics Letters · doi:10.1063/1.4791570 · Cited by 24 · see citing works
Enhanced InAs nanopillar electrical transport by in-situ passivation
Lin, A., Shapiro, J., Scofield, A. C., et al. (2013) · Applied Physics Letters · doi:10.1063/1.4791592 · Cited by 16 · see citing works
Flagged first, then by citations
Cited by
Sorted by citations
Ultrafast terahertz emission from emerging symmetry-broken materials
Pettine, J., Padmanabhan, P., Sirica, N., Prasankumar, R. P., Taylor, A. J., & Chen, H.-T. (2023) · Light: Science & Applications · doi:10.1038/s41377-023-01163-w · Cited by 81 · see citing works
- Authors
- Arlauskas, A., Treu, J., Saller, K., Beleckaitė, I., Koblmüller, G., & Krotkus, A.
- Affiliations
- Center for Physical Sciences and Technology (LT)
- Technical University of Munich (DE)
- Center for Physical Sciences and Technology, 01180, A. Goštauto 11, Vilnius, Lithuania
- Corresponding author
- Koblmüller, Gregor
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-02-10
- Volume
- 14
- Issue
- 3
- Pages
- 1508-1514
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2332582845
- Cited by
- 40
- References
- 33
- Citations by year
- 2025: 3 · 2023: 3 · 2022: 1 · 2021: 6 · 2020: 3 · 2019: 3 · 2018: 6 · 2017: 4 · 2016: 3 · 2015: 5 · 2014: 3
- FWCI
- 2.66
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nano Letters (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Deutsche Forschungsgemeinschaft
- Lietuvos Mokslo Taryba
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
- Physical Sciences › Engineering › Biomedical Engineering › Nanowire Synthesis and Applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Gyrotron and Vacuum Electronics Research
- Keywords
- terahertz emission, InAs nanowires, catalyst-free growth, nanowire arrays, photo-Dember effect, aspect ratio, excitation wavelength dependence, polarization dependence, two-color pump-probe, core-shell nanowires
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
