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Unity-Order Index Change in Transparent Conducting Oxides at Visible Frequencies
Abstract
We report a method for obtaining unity-order refractive index changes in the accumulation layer of a metal-oxide-semiconductor heterostructure with conducting oxide as the active material. Under applied field, carrier concentrations at the dielectric/conducting oxide interface increase from 1 x 10(21)/cm(3) to 2.8 x 10(22)/cm(3), resulting in a local refractive index change of 1.39 at 800 nm. When this structure is modeled as a plasmonic waveguide, the change corresponds to a modal index change of 0.08 for the plasmonic mode.
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Metadata
- Authors
- Feigenbaum, E., Diest, K., & Atwater, H. A.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-05-18
- Volume
- 10
- Issue
- 6
- Pages
- 2111-2116
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1986224902
- Cited by
- 534
- References
- 0
- FWCI
- 11.29
- Type
- journal article
- Language
- en
- Open access
- closed
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