Cited by 353Nanowire Synthesis and ApplicationsAnalytical Chemistry and SensorsAdvancements in Semiconductor Devices and Circuit Design

Nernst Limit in Dual-Gated Si-Nanowire FET Sensors

Knopfmacher, O., Tarasov, A., Fu, Wangyang, Wipf, M., Niesen, B., Calame, M., Schönenberger, C.·2010·Nano Letters

Abstract

Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.

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Crossref · 10.1021/nl100892y

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Authors
Knopfmacher, O., Tarasov, A., Fu, W., Wipf, M., Niesen, B., Calame, M., & Schönenberger, C.
Affiliations
  • University of Basel (CH)
  • Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
Venue
Nano Letters
Published
2010-05-25
Volume
10
Issue
6
Pages
2268-2274
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W1967539302
Cited by
353
References
1
Citations by year
2026: 9 · 2025: 12 · 2024: 16 · 2023: 14 · 2022: 17 · 2021: 26 · 2020: 27 · 2019: 25 · 2018: 23 · 2017: 27 · 2016: 27 · 2015: 22 · 2014: 34 · 2013: 32 · 2012: 22
FWCI
14.00
Type
journal article
Language
en
Open access
closed
Locations
  • Nano Letters (publishedVersion)
  • PubMed (publishedVersion)
Topics
  • Physical Sciences › Engineering › Biomedical Engineering › Nanowire Synthesis and Applications
  • Physical Sciences › Chemical Engineering › Bioengineering › Analytical Chemistry and Sensors
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
Keywords
silicon nanowire transistors, pH sensing, label-free detection, capacitance model, signal amplification, hysteresis-free operation, chemical and biological sensors

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