The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene
Open accessAbstract
We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of ∼1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity. If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate.
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Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Self-citationElectronic properties of disordered two-dimensional carbon
Peres, N. M. R., Guinea, F., & Castro Neto, A. H. (2006) · Physical Review B · doi:10.1103/physrevb.73.125411 · Cited by 1,445
Cited by
Raman spectroscopy as a versatile tool for studying the properties of graphene
Ferrari, A. C., & Basko, D. M. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.46 · Cited by 7,405
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Ferrari, A. C., Bonaccorso, F., Fal'ko, V., Novoselov, K. S., Roche, S., Bøggild, P., Borini, S., Koppens, F. H. L., Palermo, V., Pugno, N., et al. (2015) · Nanoscale · doi:10.1039/c4nr01600a · Cited by 3,027
Self-citationProbing the Nature of Defects in Graphene by Raman Spectroscopy
Eckmann, A., Felten, A., Mishchenko, A., Britnell, L., Krupke, R., Novoselov, K. S., & Casiraghi, C. (2012) · Nano Letters · doi:10.1021/nl300901a · Cited by 2,319
Self-citationRaman spectroscopy of graphene-based materials and its applications in related devices
Wu, J.-B., Lin, M.-L., Cong, X., Liu, H.-N., & Tan, P.-H. (2018) · Chemical Society Reviews · doi:10.1039/c6cs00915h · Cited by 2,092
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
Nan, H., Wang, Z., Wang, W., Liang, Z., Lu, Y., Chen, Q., He, D., Tan, P., Miao, F., Wang, X., et al. (2014) · ACS Nano · doi:10.1021/nn500532f · Cited by 1,244
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Metadata
- Authors
- Ni, Z. H., Ponomarenko, L. A., Nair, R. R., Yang, R., Anissimova, S., Grigorieva, I. V., Schedin, F., Blake, P., Shen, Z. X., Hill, E. H., Novoselov, K. S., & Geim, A. K.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-08-26
- Volume
- 10
- Issue
- 10
- Pages
- 3868-3872
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1998979372
- Cited by
- 283
- References
- 2
- FWCI
- 17.14
- Type
- journal article
- Language
- en
- Open access
- green
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- Ni, Z. H., Ponomarenko, L. A., Nair, R. R., Yang, R., Anissimova, S., Grigorieva, I. V., Schedin, F., Blake, P., Shen, Z. X., Hill, E. H., Novoselov, K. S., & Geim, A. K. (2010). On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene. Nano Letters. https://doi.org/10.1021/nl101399r
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