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Quantum Dot Size Dependent J−V Characteristics in Heterojunction ZnO/PbS Quantum Dot Solar Cells

Gao, Jianbo, Luther, Joseph M., Semonin, Octavi E., Ellingson, Randy J., Nozik, Arthur J., Beard, Matthew C.·2011·Nano Letters

Abstract

The current-voltage (J-V) characteristics of ZnO/PbS quantum dot (QD) solar cells show a QD size-dependent behavior resulting from a Schottky junction that forms at the back metal electrode opposing the desirable diode formed between the ZnO and PbS QD layers. We study a QD size-dependent roll-over effect that refers to the saturation of photocurrent in forward bias and crossover effect which occurs when the light and dark J-V curves intersect. We model the J-V characteristics with a main diode formed between the n-type ZnO nanocrystal (NC) layer and p-type PbS QD layer in series with a leaky Schottky-diode formed between PbS QD layer and metal contact. We show how the characteristics of the two diodes depend on QD size, metal work function, and PbS QD layer thickness, and we discuss how the presence of the back diode complicates finding an optimal layer thickness. Finally, we present Kelvin probe measurements to determine the Fermi level of the QD layers and discuss band alignment, Fermi-level pinning, and the V(oc) within these devices.

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Metadata

Authors
Gao, J., Luther, J. M., Semonin, O. E., Ellingson, R. J., Nozik, A. J., & Beard, M. C.
Venue
Nano Letters
Published
2011-02-03
Volume
11
Issue
3
Pages
1002-1008
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2039770199
Cited by
311
References
0
FWCI
19.06
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Quantum Dot Size Dependent J−V Characteristics in Heterojunction ZnO/PbS Quantum Dot Solar Cells. https://app.cochat.ai/papers/10.1021/nl103814g
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Gao, J., Luther, J. M., Semonin, O. E., Ellingson, R. J., Nozik, A. J., & Beard, M. C. (2011). Quantum Dot Size Dependent J−V Characteristics in Heterojunction ZnO/PbS Quantum Dot Solar Cells. Nano Letters. https://doi.org/10.1021/nl103814g

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