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Cited by 1,795Quantum Dots Synthesis And PropertiesZnO doping and propertiesChalcogenide Semiconductor Thin Films

Improved performance and stability in quantum dot solar cells through band alignment engineering

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Chuang, Chia-Hao M., Brown, Patrick R., Bulović, Vladimir, Bawendi, Moungi G.·2014·Nature Materials
DOI 10.1038/nmat3984PMC PMC4110173
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Abstract

Solution processing is a promising route for the realization of low-cost, large-area, flexible and lightweight photovoltaic devices with short energy payback time and high specific power. However, solar cells based on solution-processed organic, inorganic and hybrid materials reported thus far generally suffer from poor air stability, require an inert-atmosphere processing environment or necessitate high-temperature processing, all of which increase manufacturing complexities and costs. Simultaneously fulfilling the goals of high efficiency, low-temperature fabrication conditions and good atmospheric stability remains a major technical challenge, which may be addressed, as we demonstrate here, with the development of room-temperature solution-processed ZnO/PbS quantum dot solar cells. By engineering the band alignment of the quantum dot layers through the use of different ligand treatments, a certified efficiency of 8.55% has been reached. Furthermore, the performance of unencapsulated devices remains unchanged for over 150 days of storage in air. This material system introduces a new approach towards the goal of high-performance air-stable solar cells compatible with simple solution processes and deposition on flexible substrates.

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  • The 1.3 μm PbS-TBAI layer between the 2.1 μm PbS-TBAI and PbS-EDT layers should be n-doped.

    “The 1.3 μ m PbS-TBAI layer between the 2.1 μ m PbS-TBAI and PbS-EDT layers should be ndoped, 38”

    From A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 <i>µ</i>m (2024) · cites this paper as [38]

    The main text discusses band alignment at a PbS-TBAI/PbS-EDT interface, and its graded-doping passage describes earlier devices, not a doping recommendation for this one. Searches for 1.3 μm and 2.1 μm PbS-TBAI layers and for n-doping found no passage addressing whether the proposed intermediate layer should be n-doped; page numbers are unavailable in our copy. (LLM, conf=0.72)

    Experimental — accuracy not yet measured

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Research works printed but not linked: 24

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Cited by

Sorted by citations

Authors
Chuang, C.-H. M., Brown, P. R., Bulović, V., & Bawendi, M. G.
Affiliations
Massachusetts Institute of Technology (US)
Corresponding author
Bawendi, Moungi G.
ORCID
Venue
Nature Materials
Publisher
Springer Science and Business Media LLC
Published
2014-05-25
Volume
13
Issue
8
Pages
796-801
ISSN
  • 1476-1122 (ISSN-L)
  • 1476-4660
DOI
10.1038/nmat3984
PMC
PMC4110173
OpenAlex
W1602288028
Cited by
1,795
References
0
Citations by year
2026: 67 · 2025: 90 · 2024: 113 · 2023: 105 · 2022: 106 · 2021: 122 · 2020: 173 · 2019: 181 · 2018: 197 · 2017: 194 · 2016: 208 · 2015: 188 · 2014: 51
FWCI
91.44
Type
journal article
Language
en
Open access
Licence
Locations
  • Nature Materials (publishedVersion)
  • PubMed (publishedVersion)
  • PubMed Central (acceptedVersion)
  • DSpace@MIT (Massachusetts Institute of Technology) (submittedVersion, cc-by-nc)
  • PMC
Funders
National Institute of Biomedical Imaging and Bioengineering (P41EB015871)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Quantum Dots Synthesis And Properties
  • Physical Sciences › Materials Science › Materials Chemistry › ZnO doping and properties
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Chalcogenide Semiconductor Thin Films
Keywords
quantum dot solar cells, band alignment engineering, ligand engineering, air stability, solution-processed photovoltaics, room-temperature fabrication, power conversion efficiency, flexible photovoltaics, colloidal quantum dots

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