The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO3
Abstract
Topological walls separating domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that ferroelectric domain walls in multiferroic BiFeO(3) are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting domain walls, tune domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferroelectric semiconductors.
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Cites
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
Di Ventra, M., Pershin, Y. V., & Chua, L. O. (2009) · Proceedings of the IEEE · doi:10.1109/jproc.2009.2021077 · Cited by 1,212
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Advances in magnetoelectric multiferroics
Spaldin, N. A., & Ramesh, R. (2019) · Nature Materials · doi:10.1038/s41563-018-0275-2 · Cited by 1,766
Self-citationResistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Thin-film ferroelectric materials and their applications
Martin, L. W., & Rappe, A. M. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.87 · Cited by 1,071
A comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
Magnetoelectric and multiferroic media
Pyatakov, A. P., & Zvezdin, A. K. (2012) · Physics-Uspekhi · doi:10.3367/ufne.0182.201206b.0593 · Cited by 565
BiFeO 3 Ceramics: Processing, Electrical, and Electromechanical Properties
Rojac, T., Bencan, A., Malic, B., Tutuncu, G., Jones, J. L., Daniels, J. E., & Damjanovic, D. (2014) · Journal of the American Ceramic Society · doi:10.1111/jace.12982 · Cited by 482
BiFeO3epitaxial thin films and devices: past, present and future
Sando, D., Barthélémy, A., & Bibes, M. (2014) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/26/47/473201 · Cited by 353
Nonvolatile ferroelectric domain wall memory
Sharma, P., Zhang, Q., Sando, D., Lei, C. H., Liu, Y., Li, J., Nagarajan, V., & Seidel, J. (2017) · Science Advances · doi:10.1126/sciadv.1700512 · Cited by 353
Self-citationVasudevan, R. K., Balke, N., Maksymovych, P., Jesse, S., & Kalinin, S. V. (2017) · Applied Physics Reviews · doi:10.1063/1.4979015 · Cited by 344
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Metadata
- Authors
- Maksymovych, P., Seidel, J., Chu, Y. H., Wu, P., Baddorf, A. P., Chen, L.-Q., Kalinin, S. V., & Ramesh, R.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-05-11
- Volume
- 11
- Issue
- 5
- Pages
- 1906-1912
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2033814017
- Cited by
- 255
- References
- 3
- FWCI
- 8.58
- Type
- journal article
- Language
- en
- Open access
- closed
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