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Cited by 485

The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.

Graphene-Silicon Schottky Diodes

Chen, Chun-Chung, Aykol, Mehmet, Chang, Chia-Chi, Levi, A. F. J., Cronin, Stephen B.·2011·Nano Letters

Abstract

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature strongly influences the ideality factor of graphene-silicon Schottky diodes. The ideality factor, however, does not depend strongly on the number of graphene layers. The optical transparency of the thin graphene layer allows the underlying silicon substrate to absorb incident laser light and generate a photocurrent. Spatially resolved photocurrent measurements reveal the importance of inhomogeneity and series resistance in the devices.

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Metadata

Authors
Chen, C.-C., Aykol, M., Chang, C.-C., Levi, A. F. J., & Cronin, S. B.
Venue
Nano Letters
Published
2011-05-11
Volume
11
Issue
5
Pages
1863-1867
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2050155811
Cited by
485
References
30
FWCI
18.13
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Graphene-Silicon Schottky Diodes. https://app.cochat.ai/papers/10.1021/nl104364c
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Chen, C.-C., Aykol, M., Chang, C.-C., Levi, A. F. J., & Cronin, S. B. (2011). Graphene-Silicon Schottky Diodes. Nano Letters. https://doi.org/10.1021/nl104364c

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.