The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
Abstract
Updating the Triode with Graphene: In early electronics, the triode—a vacuum device that combined a diode and an electrical grid—was used to control and amplify signals, but was replaced in most applications by solid-state silicon electronics. One characteristic of silicon-metal interfaces is that the Schottky barrier created—which acts as a diode—does not change with the work function of the metal—the Fermi level is pinned by the presence of surface states. Yang et al. (p. 1140 , published online 17 May) now show that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.
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Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Self-citation
Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
Van der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Duan, X., Wang, C., Pan, A., Yu, R., & Duan, X. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00507h · Cited by 1,161
Metadata
- Authors
- Yang, H., Heo, J., Park, S., Song, H. J., Seo, D. H., Byun, K.-E., Kim, P., Yoo, I., Chung, H.-J., & Kim, K.
- Venue
- Science
- Published
- 2012-06
- Volume
- 336
- Issue
- 6085
- Pages
- 1140-1143
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2091023923
- Cited by
- 961
- References
- 3
- FWCI
- 45.47
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yang, H., Heo, J., Park, S., Song, H. J., Seo, D. H., Byun, K.-E., Kim, P., Yoo, I., Chung, H.-J., & Kim, K. (2012). Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science. https://doi.org/10.1126/science.1220527
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