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Cited by 219

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Si/InGaN Core/Shell Hierarchical Nanowire Arrays and their Photoelectrochemical Properties

Open access
Hwang, Yun Jeong, Wu, Cheng Hao, Hahn, Chris, Jeong, Hoon Eui, Yang, Peidong·2012·Nano Letters

Abstract

Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays increased by 5 times compared to the photocurrent density with InGaN nanowire arrays grown on planar Si (1.23 V vs RHE). High-resolution transmission electron microscopy showed that InGaN nanowires are stable after 15 h of illumination. These measurements show that Si/InGaN hierarchical nanostructures are a viable high surface area electrode geometry for solar water splitting.

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Metadata

Authors
Hwang, Y. J., Wu, C. H., Hahn, C., Jeong, H. E., & Yang, P.
Venue
Nano Letters
Published
2012-02-27
Volume
12
Issue
3
Pages
1678-1682
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2096533526
Cited by
219
References
2
FWCI
12.03
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Si/InGaN Core/Shell Hierarchical Nanowire Arrays and their Photoelectrochemical Properties. https://app.cochat.ai/papers/10.1021/nl3001138
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Hwang, Y. J., Wu, C. H., Hahn, C., Jeong, H. E., & Yang, P. (2012). Si/InGaN Core/Shell Hierarchical Nanowire Arrays and their Photoelectrochemical Properties. Nano Letters. https://doi.org/10.1021/nl3001138

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