The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
Abstract
Molybdenum disulfide (MoS(2)) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V·s)) and a high on/off current ratio (10(5)). Furthermore, the MoS(2) transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS(2) films make them suitable for use in large-area flexible electronics.
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Cites
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Flexible organic transistors and circuits with extreme bending stability
Sekitani, T., Zschieschang, U., Klauk, H., & Someya, T. (2010) · Nature Materials · doi:10.1038/nmat2896 · Cited by 1,253
Cited by
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Self-citationEmerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Metal dichalcogenide nanosheets: preparation, properties and applications
Huang, X., Zeng, Z., & Zhang, H. (2013) · Chemical Society Reviews · doi:10.1039/c2cs35387c · Cited by 2,030
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Metadata
- Authors
- Pu, J., Yomogida, Y., Liu, K.-K., Li, L.-J., Iwasa, Y., & Takenobu, T.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-07-18
- Volume
- 12
- Issue
- 8
- Pages
- 4013-4017
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2001791509
- Cited by
- 823
- References
- 2
- FWCI
- 30.99
- Type
- journal article
- Language
- en
- Open access
- closed
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- Pu, J., Yomogida, Y., Liu, K.-K., Li, L.-J., Iwasa, Y., & Takenobu, T. (2012). Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics. Nano Letters. https://doi.org/10.1021/nl301335q
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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