The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Ferroelectric Tunnel Memristor
Abstract
Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Employment of memristors can radically enhance the computational power and energy efficiency of electronic systems. Most of the existing memristor prototypes involve transition metal oxide resistive layers where conductive filaments formation and/or the interface contact resistance control the memristive behavior. In this paper, we demonstrate a new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage. The ferroelectric tunnel memristors exhibit a reversible hysteretic nonvolatile resistive switching with a resistance ratio of up to 10(5) % at room temperature. The observed memristive behavior is attributed to the field-induced charge redistribution at the ferroelectric/electrode interface, resulting in the modulation of the interface barrier height.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Resistance switching memories are memristors
Chua, L. (2011) · Applied Physics A · doi:10.1007/s00339-011-6264-9 · Cited by 1,434
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Catalano, S., Gibert, M., Fowlie, J., Íñiguez, J., Triscone, J.-M., & Kreisel, J. (2018) · Reports on Progress in Physics · doi:10.1088/1361-6633/aaa37a · Cited by 453
Recent Progress in Two‐Dimensional Ferroelectric Materials
Guan, Z., Hu, H., Shen, X., Xiang, P., Zhong, N., Chu, J., & Duan, C. (2020) · Advanced Electronic Materials · doi:10.1002/aelm.201900818 · Cited by 409
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
Zhang, Y., Wang, Z., Zhu, J., Yang, Y., Rao, M., Song, W., Zhuo, Y., Zhang, X., Cui, M., Shen, L., et al. (2020) · Applied Physics Reviews · doi:10.1063/1.5124027 · Cited by 384
Metadata
- Authors
- Kim, D. J., Lu, H., Ryu, S., Bark, C.-W., Eom, C.-B., Tsymbal, E. Y., & Gruverman, A.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-10-11
- Volume
- 12
- Issue
- 11
- Pages
- 5697-5702
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2334577204
- Cited by
- 354
- References
- 6
- FWCI
- 11.80
- Type
- journal article
- Language
- en
- Open access
- closed
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