The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
Open accessAbstract
Monolayer molybdenum disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this Letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω·mm, which can be significantly decreased to 10 Ω·mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm(2)/(V s) in monolayer CVD MoS2 films, respectively.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Topological Insulators in Three Dimensions
Fu, L., Kane, C. L., & Mele, E. J. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.106803 · Cited by 4,651
Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
Chen, Y. L., Analytis, J. G., Chu, J.-H., Liu, Z. K., Mo, S.-K., Qi, X. L., Zhang, H. J., Lu, D. H., Dai, X., Fang, Z., et al. (2009) · Science · doi:10.1126/science.1173034 · Cited by 3,585
Cited by
Electronics based on two-dimensional materials
Fiori, G., Bonaccorso, F., Iannaccone, G., Palacios, T., Neumaier, D., Seabaugh, A., Banerjee, S. K., & Colombo, L. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.207 · Cited by 3,176
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Deng, Y., Luo, Z., Conrad, N. J., Liu, H., Gong, Y., Najmaei, S., Ajayan, P. M., Lou, J., Xu, X., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn5027388 · Cited by 1,246
Self-citationPolarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons
Cai, Y., Zhang, G., & Zhang, Y.-W. (2014) · Journal of the American Chemical Society · doi:10.1021/ja4109787 · Cited by 959
Voiry, D., Fullon, R., Yang, J., de Carvalho Castro e Silva, C., Kappera, R., Bozkurt, I., Kaplan, D., Lagos, M. J., Batson, P. E., Gupta, G., et al. (2016) · Nature Materials · doi:10.1038/nmat4660 · Cited by 824
Metadata
- Authors
- Liu, H., Si, M., Najmaei, S., Neal, A. T., Du, Y., Ajayan, P. M., Lou, J., & Ye, P. D.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-05-20
- Volume
- 13
- Issue
- 6
- Pages
- 2640-2646
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1891656487
- Cited by
- 223
- References
- 4
- FWCI
- 12.28
- Type
- journal article
- Language
- en
- Open access
- green
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