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Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
Abstract
MoS2 and related metal dichalcogenides (MoSe2, WS2, WSe2) are layered two-dimensional materials that are promising for nanoelectronics and spintronics. For instance, large spin-orbit coupling and spin splitting in the valence band of single layer (SL) MoS2 could lead to enhanced spin lifetimes and large spin Hall angles. Understanding the nature of the contacts is a critical first step for realizing spin injection and spin transport in MoS2. Here, we have investigated Co contacts to SL MoS2 and find that the Schottky barrier height can be significantly decreased with the addition of a thin oxide barrier (MgO). Further, we show that the barrier height can be reduced to zero by tuning the carrier density with back gate. Therefore, the MgO could simultaneously provide a tunnel barrier to alleviate conductance mismatch while minimizing carrier depletion near the contacts. Such control over the barrier height should allow for careful engineering of the contacts to realize spin injection in these materials.
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Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
Voiry, D., Fullon, R., Yang, J., de Carvalho Castro e Silva, C., Kappera, R., Bozkurt, I., Kaplan, D., Lagos, M. J., Batson, P. E., Gupta, G., et al. (2016) · Nature Materials · doi:10.1038/nmat4660 · Cited by 824
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Synthesis, stabilization and applications of 2-dimensional 1T metallic MoS 2
Shi, S., Sun, Z., & Hu, Y. H. (2018) · Journal of Materials Chemistry A · doi:10.1039/c8ta08152b · Cited by 374
Metadata
- Authors
- Chen, J.-R., Odenthal, P. M., Swartz, A. G., Floyd, G. C., Wen, H., Luo, K. Y., & Kawakami, R. K.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-06-12
- Volume
- 13
- Issue
- 7
- Pages
- 3106-3110
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2325211342
- Cited by
- 397
- References
- 0
- FWCI
- 15.24
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chen, J.-R., Odenthal, P. M., Swartz, A. G., Floyd, G. C., Wen, H., Luo, K. Y., & Kawakami, R. K. (2013). Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts. Nano Letters. https://doi.org/10.1021/nl4010157
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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