The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2
Open accessAbstract
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.
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Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Voiry, D., Yang, J., & Chhowalla, M. (2016) · Advanced Materials · doi:10.1002/adma.201505597 · Cited by 949
Liu, G.-B., Xiao, D., Yao, Y., Xu, X., & Yao, W. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00301b · Cited by 698
Metadata
- Authors
- He, K., Poole, C., Mak, K. F., & Shan, J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-05-17
- Volume
- 13
- Issue
- 6
- Pages
- 2931-2936
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1968348640
- Cited by
- 983
- References
- 3
- FWCI
- 34.49
- Type
- journal article
- Language
- en
- Open access
- green
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- He, K., Poole, C., Mak, K. F., & Shan, J. (2013). Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2. Nano Letters. https://doi.org/10.1021/nl4013166
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