The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
Open accessAbstract
Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (<10(-5) Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Self-citationAnalyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Electronic Transport in Two-Dimensional Materials
Sangwan, V. K., & Hersam, M. C. (2018) · Annual Review of Physical Chemistry · doi:10.1146/annurev-physchem-050317-021353 · Cited by 336
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Metadata
- Authors
- Sangwan, V. K., Arnold, H. N., Jariwala, D., Marks, T. J., Lauhon, L. J., & Hersam, M. C.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-08-19
- Volume
- 13
- Issue
- 9
- Pages
- 4351-4355
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2003460823
- Cited by
- 265
- References
- 1
- FWCI
- 12.88
- Type
- journal article
- Language
- en
- Open access
- green
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