The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition
Abstract
The thinnest semiconductor, molybdenum disulfide (MoS2) monolayer, exhibits promising prospects in the applications of optoelectronics and valleytronics. A uniform and highly crystalline MoS2 monolayer in a large area is highly desirable for both fundamental studies and substantial applications. Here, utilizing various aromatic molecules as seeding promoters, a large-area, highly crystalline, and uniform MoS2 monolayer was achieved with chemical vapor deposition (CVD) at a relatively low growth temperature (650 °C). The dependence of the growth results on the seed concentration and on the use of different seeding promoters is further investigated. It is also found that an optimized concentration of seed molecules is helpful for the nucleation of the MoS2. The newly identified seed molecules can be easily deposited on various substrates and allows the direct growth of monolayer MoS2 on Au, hexagonal boron nitride (h-BN), and graphene to achieve various hybrid structures.
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Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
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Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition
Wang, X., Feng, H., Wu, Y., & Jiao, L. (2013) · Journal of the American Chemical Society · doi:10.1021/ja4013485 · Cited by 748
Cited by
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Self-citationShi, Y., Li, H., & Li, L.-J. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00256c · Cited by 845
Shi, J., Ma, D., Han, G.-F., Zhang, Y., Ji, Q., Gao, T., Sun, J., Song, X., Li, C., Zhang, Y., et al. (2014) · ACS Nano · doi:10.1021/nn503211t · Cited by 459
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
Wang, S., Wang, X., & Warner, J. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b00655 · Cited by 389
Metadata
- Authors
- Ling, X., Lee, Y.-H., Lin, Y., Fang, W., Yu, L., Dresselhaus, M. S., & Kong, J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-01-29
- Volume
- 14
- Issue
- 2
- Pages
- 464-472
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2075952841
- Cited by
- 694
- References
- 4
- FWCI
- 38.72
- Type
- journal article
- Language
- en
- Open access
- closed
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