Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 320

The DOI matches its Crossref record; 46 of the 46 references it cites were found in a registry or an index.

Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage

Wang, Xi, Weng, Qunhong, Liu, Xizheng, Wang, Xuebin, Tang, Dai-Ming, Tian, Wei, Zhang, Chao, Yi, Wei, Liu, Dequan, Bando, Yoshio, Golberg, Dmitri·2014·Nano Letters

Abstract

Distinct from pure graphene, N-doped graphene (GN) has been found to possess high rate capability and capacity for lithium storage. However, there has still been a lack of direct experimental evidence and fundamental understanding of the storage mechanisms at the atomic scale, which may shed a new light on the reasons of the ultrafast lithium storage property and high capacity for GN. Here we report on the atomistic insights of the GN energy storage as revealed by in situ transmission electron microscopy (TEM). The lithiation process on edges and basal planes is directly visualized, the pyrrolic N "hole" defect and the perturbed solid-electrolyte-interface configurations are observed, and charge transfer states for three N-existing forms are also investigated. In situ high-resolution TEM experiments together with theoretical calculations provide a solid evidence that enlarged edge {0002} spacings and surface hole defects result in improved surface capacitive effects and thus high rate capability and the high capacity are owing to short-distance orderings at the edges during discharging and numerous surface defects; the phenomena cannot be understood previously by standard electron or X-ray diffraction analyses.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1021/nl4038592

Cites

46 of 46 references verified0 citation errors · 0 not checkable

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cites

1 retracted

Show all 46 references

Cited by

See all 320

Metadata

Authors
Wang, X., Weng, Q., Liu, X., Wang, X., Tang, D.-M., Tian, W., Zhang, C., Yi, W., Liu, D., Bando, Y., & Golberg, D.
Venue
Nano Letters
Published
2014-02-05
Volume
14
Issue
3
Pages
1164-1171
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2320634911
Cited by
320
References
46
FWCI
22.29
Type
journal article
Language
en
Open access
closed

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage. https://app.cochat.ai/papers/10.1021/nl4038592
The paper
Wang, X., Weng, Q., Liu, X., Wang, X., Tang, D.-M., Tian, W., Zhang, C., Yi, W., Liu, D., Bando, Y., & Golberg, D. (2014). Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage. Nano Letters. https://doi.org/10.1021/nl4038592

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.