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Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene
Open accessAbstract
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
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Cited by
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Metadata
- Authors
- Panchakarla, L. S., Subrahmanyam, K. S., Saha, S. K., Govindaraj, A., Krishnamurthy, H. R., Waghmare, U. V., & Rao, C. N. R.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2009-12-08
- Volume
- 21
- Issue
- 46
- Pages
- 4726-4730
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W1981061654
- Cited by
- 1,804
- References
- 4
- FWCI
- 36.05
- Type
- journal article
- Language
- en
- Open access
- green
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- Panchakarla, L. S., Subrahmanyam, K. S., Saha, S. K., Govindaraj, A., Krishnamurthy, H. R., Waghmare, U. V., & Rao, C. N. R. (2009). Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene. Advanced Materials. https://doi.org/10.1002/adma.200901285
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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