The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
Open accessAbstract
Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Self-citation
Cited by
Shi, Y., Li, H., & Li, L.-J. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00256c · Cited by 845
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Self-citationHalide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals
Li, S., Wang, S., Tang, D.-M., Zhao, W., Xu, H., Chu, L., Bando, Y., Golberg, D., & Eda, G. (2015) · Applied Materials Today · doi:10.1016/j.apmt.2015.09.001 · Cited by 465
Self-citationAnalyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Chen, W., Zhao, J., Zhang, J., Gu, L., Yang, Z., Li, X., Yu, H., Zhu, X., Yang, R., Shi, D., et al. (2015) · Journal of the American Chemical Society · doi:10.1021/jacs.5b10519 · Cited by 389
Metadata
- Authors
- Schmidt, H., Wang, S., Chu, L., Toh, M., Kumar, R., Zhao, W., Castro Neto, A. H., Martin, J., Adam, S., Özyilmaz, B., & Eda, G.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-03-25
- Volume
- 14
- Issue
- 4
- Pages
- 1909-1913
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2136240597
- Cited by
- 484
- References
- 3
- FWCI
- 30.67
- Type
- journal article
- Language
- en
- Open access
- green
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