The DOI matches its Crossref record; 26 of the 26 references it cites were found in a registry or an index.
Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
Open accessAbstract
Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Self-citationCoupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
Xiao, D., Liu, G.-B., Feng, W., Xu, X., & Yao, W. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.196802 · Cited by 5,152
Electronic transport in two-dimensional graphene
Das Sarma, S., Adam, S., Hwang, E. H., & Rossi, E. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.407 · Cited by 3,447
Self-citationSynthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104798 · Cited by 3,422
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
van der Zande, A. M., Huang, P. Y., Chenet, D. A., Berkelbach, T. C., You, Y., Lee, G.-H., Heinz, T. F., Reichman, D. R., Muller, D. A., & Hone, J. C. (2013) · Nature Materials · doi:10.1038/nmat3633 · Cited by 2,197
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
Najmaei, S., Liu, Z., Zhou, W., Zou, X., Shi, G., Lei, S., Yakobson, B. I., Idrobo, J.-C., Ajayan, P. M., & Lou, J. (2013) · Nature Materials · doi:10.1038/nmat3673 · Cited by 1,840
Mobility engineering and a metal–insulator transition in monolayer MoS2
Radisavljevic, B., & Kis, A. (2013) · Nature Materials · doi:10.1038/nmat3687 · Cited by 1,817
Cited by
Bandgap engineering of two-dimensional semiconductor materials
Chaves, A., Azadani, J. G., Alsalman, H., da Costa, D. R., Frisenda, R., Chaves, A. J., Song, S. H., Kim, Y. D., He, D., Zhou, J., et al. (2020) · npj 2D Materials and Applications · doi:10.1038/s41699-020-00162-4 · Cited by 1,296
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
Duan, X., Wang, C., Shaw, J. C., Cheng, R., Chen, Y., Li, H., Wu, X., Tang, Y., Zhang, Q., Pan, A., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.222 · Cited by 1,241
Solution-processable 2D semiconductors for high-performance large-area electronics
Lin, Z., Liu, Y., Halim, U., Ding, M., Liu, Y., Wang, Y., Jia, C., Chen, P., Duan, X., Wang, C., et al. (2018) · Nature · doi:10.1038/s41586-018-0574-4 · Cited by 958
Large-Area Epitaxial Monolayer MoS2
Dumcenco, D., Ovchinnikov, D., Marinov, K., Lazić, P., Gibertini, M., Marzari, N., Sanchez, O. L., Kung, Y.-C., Krasnozhon, D., Chen, M.-W., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b01281 · Cited by 888
Shi, Y., Li, H., & Li, L.-J. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00256c · Cited by 845
Recent Progress and Future Prospects of 2D‐Based Photodetectors
Huo, N., & Konstantatos, G. (2018) · Advanced Materials · doi:10.1002/adma.201801164 · Cited by 730
Li, S.-L., Tsukagoshi, K., Orgiu, E., & Samorì, P. (2016) · Chemical Society Reviews · doi:10.1039/c5cs00517e · Cited by 549
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Self-citationHalide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals
Li, S., Wang, S., Tang, D.-M., Zhao, W., Xu, H., Chu, L., Bando, Y., Golberg, D., & Eda, G. (2015) · Applied Materials Today · doi:10.1016/j.apmt.2015.09.001 · Cited by 465
Self-citationAnalyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
Eichfeld, S. M., Hossain, L., Lin, Y.-C., Piasecki, A. F., Kupp, B., Birdwell, A. G., Burke, R. A., Lu, N., Peng, X., Li, J., et al. (2015) · ACS Nano · doi:10.1021/nn5073286 · Cited by 416
Ji, Q., Zhang, Y., Zhang, Y., & Liu, Z. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00258j · Cited by 403
Chen, W., Zhao, J., Zhang, J., Gu, L., Yang, Z., Li, X., Yu, H., Zhu, X., Yang, R., Shi, D., et al. (2015) · Journal of the American Chemical Society · doi:10.1021/jacs.5b10519 · Cited by 389
Vacancies in functional materials for clean energy storage and harvesting: the perfect imperfection
Li, G., Blake, G. R., & Palstra, T. T. M. (2017) · Chemical Society Reviews · doi:10.1039/c6cs00571c · Cited by 336
Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C. (2016) · ACS Nano · doi:10.1021/acsnano.6b01091 · Cited by 283
MoS2 photodetectors integrated with photonic circuits
Gonzalez Marin, J. F., Unuchek, D., Watanabe, K., Taniguchi, T., & Kis, A. (2019) · npj 2D Materials and Applications · doi:10.1038/s41699-019-0096-4 · Cited by 158
Metadata
- Authors
- Schmidt, H., Wang, S., Chu, L., Toh, M., Kumar, R., Zhao, W., Castro Neto, A. H., Martin, J., Adam, S., Özyilmaz, B., & Eda, G.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-03-25
- Volume
- 14
- Issue
- 4
- Pages
- 1909-1913
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2136240597
- Cited by
- 484
- References
- 26
- FWCI
- 30.67
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
