The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
Abstract
Two-dimensional crystals with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. For the first time, we demonstrate that few-layered InSe photodetectors, fabricated on both a rigid SiO2/Si substrate and a flexible polyethylene terephthalate (PET) film, are capable of conducting broadband photodetection from the visible to near-infrared region (450-785 nm) with high photoresponsivities of up to 12.3 AW(-1) at 450 nm (on SiO2/Si) and 3.9 AW(-1) at 633 nm (on PET). These photoresponsivities are superior to those of other recently reported two-dimensional (2D) crystal-based (graphene, MoS2, GaS, and GaSe) photodetectors. The InSe devices fabricated on rigid SiO2/Si substrates possess a response time of ∼50 ms and exhibit long-term stability in photoswitching. These InSe devices can also operate on a flexible substrate with or without bending and reveal comparable performance to those devices on SiO2/Si. With these excellent optoelectronic merits, we envision that the nanoscale InSe layers will not only find applications in flexible optoelectronics but also act as an active component to configure versatile 2D heterostructure devices.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
High-responsivity graphene/silicon-heterostructure waveguide photodetectors
Wang, X., Cheng, Z., Xu, K., Tsang, H. K., & Xu, J.-B. (2013) · Nature Photonics · doi:10.1038/nphoton.2013.241 · Cited by 873
Cited by
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Wide Band Gap Chalcogenide Semiconductors
Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K. A., & Zakutayev, A. (2020) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00600 · Cited by 513
Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors
Zhou, X., Zhang, Q., Gan, L., Li, H., & Zhai, T. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600318 · Cited by 361
Huang, W., Gan, L., Yang, H., Zhou, N., Wang, R., Wu, W., Li, H., Ma, Y., Zeng, H., & Zhai, T. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201702448 · Cited by 267
Metadata
- Authors
- Tamalampudi, S. R., Lu, Y.-Y., U., R. K., Sankar, R., Liao, C.-D., B., K. M., Cheng, C.-H., Chou, F. C., & Chen, Y.-T.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-04-21
- Volume
- 14
- Issue
- 5
- Pages
- 2800-2806
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2312193272
- Cited by
- 811
- References
- 2
- FWCI
- 26.21
- Type
- journal article
- Language
- en
- Open access
- closed
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- Tamalampudi, S. R., Lu, Y.-Y., U., R. K., Sankar, R., Liao, C.-D., B., K. M., Cheng, C.-H., Chou, F. C., & Chen, Y.-T. (2014). High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response. Nano Letters. https://doi.org/10.1021/nl500817g
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