The DOI matches its Crossref record; 58 of the 58 references it cites were found in a registry or an index.
Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors
Abstract
2D SnS 2 nanosheets have been attracting intensive attention as one potential candidate for the modern electronic and/or optoelectronic fields. However, the controllable large‐size growth of ultrathin SnS 2 nanosheets still remains a great challenge and the photodetectors based on SnS 2 nanosheets suffer from low responsivity, thus hindering their further applications so far. Herein, an improved chemical vapor deposition route is provided to synthesize large‐size SnS 2 nanosheets, the side length of which can surpass 150 μm. Then, ultrathin SnS 2 nanosheet‐based phototransistors are fabricated, which achieve high photoresponsivities up to 261 A W−1 (with a fast rising time of 20 ms and a falling time of 16 ms) in air and 722 A W−1 in vacuum, respectively. Furthermore, the effects of back‐gate voltage and air adsorbates on the optoelectronic properties of the SnS 2 nanosheet have been systematically investigated. In addition, a high‐performance flexible photodetector based on SnS 2 nanosheet is also fabricated with a high responsivity of 34.6 A W−1.
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Cites
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Cited by
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Metadata
- Authors
- Zhou, X., Zhang, Q., Gan, L., Li, H., & Zhai, T.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2016-04-13
- Volume
- 26
- Issue
- 24
- Pages
- 4405-4413
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2340409962
- Cited by
- 361
- References
- 58
- FWCI
- 18.77
- Type
- journal article
- Language
- en
- Open access
- closed
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