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Cited by 230Nanowire Synthesis and ApplicationsSemiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical Devices

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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing

Gao, Qian, Saxena, Dhruv, Wang, Fan, Fu, Lan, Mokkapati, Sudha, Guo, Yanan, Li, Li, Wong-Leung, Jennifer, Caroff, Philippe, Tan, Hark Hoe, Jagadish, Chennupati·2014·Nano Letters
DOI 10.1021/nl5021409
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Abstract

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

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Metadata

Authors
Gao, Q., Saxena, D., Wang, F., Fu, L., Mokkapati, S., Guo, Y., Li, L., Wong-Leung, J., Caroff, P., Tan, H. H., & Jagadish, C.
Affiliations
  • Australian National University (AU)
  • Department of Electronic Materials Engineering, Research School of Physics and Engineering, ‡Australian National Fabrication Facility, Research School of Physics and Engineering, and §Centre for Advanced Microscopy, The Australian National University, Canberra, ACT 0200, Australia
Corresponding author
Gao, Qian
ORCID
Venue
Nano Letters
Publisher
American Chemical Society (ACS)
Published
2014-08-15
Volume
14
Issue
9
Pages
5206-5211
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
DOI
10.1021/nl5021409
OpenAlex
W2091289239
Cited by
230
References
0
Citations by year
2026: 6 · 2025: 13 · 2024: 11 · 2023: 18 · 2022: 19 · 2021: 21 · 2020: 15 · 2019: 25 · 2018: 25 · 2017: 20 · 2016: 31 · 2015: 21 · 2014: 4
FWCI
13.15
Type
journal article
Language
en
Open access
closed
Locations
  • Nano Letters (publishedVersion)
  • PubMed (publishedVersion)
  • ORCA Online Research @Cardiff (Cardiff University) (submittedVersion)
  • ANU Open Research (Australian National University) (submittedVersion)
  • OPUS - Open Publications of UTS Scholars (University of Technology Sydney) (submittedVersion)
Funders
Australian Research Council
Topics
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Nanowire Synthesis and Applications
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
Keywords
InP nanowires, wurtzite structure, selective epitaxial growth, metalorganic chemical vapor deposition, quantum efficiency, room-temperature lasing, stacking faults, nanowire growth

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CoChat. (2026). Citation check: Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing. https://app.cochat.ai/papers/10.1021/nl5021409
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Gao, Q., Saxena, D., Wang, F., Fu, L., Mokkapati, S., Guo, Y., Li, L., Wong-Leung, J., Caroff, P., Tan, H. H., & Jagadish, C. (2014). Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing. Nano Letters. https://doi.org/10.1021/nl5021409