The DOI matches its Crossref record; 43 of the 43 references it cites were found in a registry or an index.
Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals
Abstract
Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.
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Cites
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
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Self-citationTwo-dimensional atomic crystals
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The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
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Self-citationAnomalous Lattice Vibrations of Single- and Few-Layer MoS2
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Self-citationWilson, J. A., & Yoffe, A. D. (1969) · Advances in Physics · doi:10.1080/00018736900101307 · Cited by 4,090
Tightly bound trions in monolayer MoS2
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Self-citationSpin and pseudospins in layered transition metal dichalcogenides
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Self-citationBandgap Engineering of Strained Monolayer and Bilayer MoS2
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Cited by
k · p theory for two-dimensional transition metal dichalcogenide semiconductors
Kormányos, A., Burkard, G., Gmitra, M., Fabian, J., Zólyomi, V., Drummond, N. D., & Fal’ko, V. (2015) · 2D Materials · doi:10.1088/2053-1583/2/2/022001 · Cited by 1,076
Structural phase transition in monolayer MoTe2 driven by electrostatic doping
Wang, Y., Xiao, J., Zhu, H., Li, Y., Alsaid, Y., Fong, K. Y., Zhou, Y., Wang, S., Shi, W., Wang, Y., et al. (2017) · Nature · doi:10.1038/nature24043 · Cited by 803
Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials
Teng, F., Hu, K., Ouyang, W., & Fang, X. (2018) · Advanced Materials · doi:10.1002/adma.201706262 · Cited by 507
Li, C., Cao, Q., Wang, F., Xiao, Y., Li, Y., Delaunay, J.-J., & Zhu, H. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00067k · Cited by 494
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Metadata
- Authors
- Ruppert, C., Aslan, B., & Heinz, T. F.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-10-10
- Volume
- 14
- Issue
- 11
- Pages
- 6231-6236
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2249694920
- Cited by
- 986
- References
- 43
- FWCI
- 26.36
- Type
- journal article
- Language
- en
- Open access
- closed
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