The DOI matches its Crossref record; 130 of the 130 references it cites were found in a registry or an index.
Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials
Abstract
Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p‐Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p‐type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p‐type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p–i–n junctions, and metal–semiconductor junctions of photodetectors based on inorganic p‐type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Black phosphorus field-effect transistors
Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.35 · Cited by 8,413
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Liu, H., Neal, A. T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn501226z · Cited by 6,480
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
Qiao, J., Kong, X., Hu, Z.-X., Yang, F., & Ji, W. (2014) · Nature Communications · doi:10.1038/ncomms5475 · Cited by 4,442
Atomically precise bottom-up fabrication of graphene nanoribbons
Cai, J., Ruffieux, P., Jaafar, R., Bieri, M., Braun, T., Blankenburg, S., Muoth, M., Seitsonen, A. P., Saleh, M., Feng, X., et al. (2010) · Nature · doi:10.1038/nature09211 · Cited by 3,689
Ultrafast graphene photodetector
Xia, F., Mueller, T., Lin, Y.-M., Valdes-Garcia, A., & Avouris, P. (2009) · Nature Nanotechnology · doi:10.1038/nnano.2009.292 · Cited by 3,089
The electrical properties of polycrystalline silicon films
Seto, J. Y. W. (1975) · Journal of Applied Physics · doi:10.1063/1.321593 · Cited by 2,905
Hybrid graphene–quantum dot phototransistors with ultrahigh gain
Konstantatos, G., Badioli, M., Gaudreau, L., Osmond, J., Bernechea, M., de Arquer, F. P. G., Gatti, F., & Koppens, F. H. L. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.60 · Cited by 2,315
Atomically thin p–n junctions with van der Waals heterointerfaces
Lee, C.-H., Lee, G.-H., van der Zande, A. M., Chen, W., Li, Y., Han, M., Cui, X., Arefe, G., Nuckolls, C., Heinz, T. F., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.150 · Cited by 2,303
Cited by
Materials and Designs for Wearable Photodetectors
Cai, S., Xu, X., Yang, W., Chen, J., & Fang, X. (2019) · Advanced Materials · doi:10.1002/adma.201808138 · Cited by 445
Self-citationRecent Progress on Photomultiplication Type Organic Photodetectors
Miao, J., & Zhang, F. (2019) · Laser & Photonics Reviews · doi:10.1002/lpor.201800204 · Cited by 283
Deng, W., Huang, H., Jin, H., Li, W., Chu, X., Xiong, D., Yan, W., Chun, F., Xie, M., Luo, C., et al. (2019) · Advanced Optical Materials · doi:10.1002/adom.201801521 · Cited by 210
Metadata
- Authors
- Teng, F., Hu, K., Ouyang, W., & Fang, X.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2018-06-10
- Volume
- 30
- Issue
- 35
- Pages
- e1706262-e1706262
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2807843822
- Cited by
- 507
- References
- 130
- FWCI
- 17.41
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials. https://app.cochat.ai/papers/10.1002/adma.201706262
- The paper
- Teng, F., Hu, K., Ouyang, W., & Fang, X. (2018). Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials. Advanced Materials. https://doi.org/10.1002/adma.201706262
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
