Metal Seed Layer Thickness-Induced Transition From Vertical to Horizontal Growth of MoS2 and WS2

Abstract

Two-dimensional (2D), layered transition metal dichalcogenides (TMDCs) can grow in two different growth directions, that is, horizontal and vertical. In the horizontal growth, 2D TMDC layers grow in planar direction with their basal planes parallel to growth substrates. In the vertical growth, 2D TMDC layers grow standing upright on growth substrates exposing their edge sites rather than their basal planes. The two distinct morphologies present unique materials properties suitable for specific applications, such as horizontal TMDCs for optoelectronics and vertical TMDCs for electrochemical reactions. Precise control of the growth orientation is essential for realizing the true potential of these 2D materials for large-scale, practical applications. In this Letter, we investigate the transition of vertical-to-horizontal growth directions in 2D molybdenum (or tungsten) disulfide and study the underlying growth mechanisms and parameters that dictate such transition. We reveal that the thickness of metal seed layers plays a critical role in determining their growth directions. With thick (>∼ 3 nm) seed layers, the vertical growth is dominant, while the horizontal growth occurs with thinner seed layers. This finding enables the synthesis of novel 2D TMDC heterostructures with anisotropic layer orientations and transport properties. The present study paves a way for developing a new class of 2D TMDCs with unconventional materials properties.