The DOI matches its Crossref record; 52 of the 52 references it cites were found in a registry or an index.
Ultrafast Dynamics of Defect-Assisted Electron–Hole Recombination in Monolayer MoS2
Open accessAbstract
In this Letter, we present nondegenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS2 monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons and holes recombine; a fast time scale that lasts ∼ 2 ps and a slow time scale that lasts longer than ∼ 100 ps. The temperature and the pump fluence dependence of the observed carrier dynamics are consistent with defect-assisted recombination as being the dominant mechanism for electron-hole recombination in which the electrons and holes are captured by defects via Auger processes. Strong Coulomb interactions in two-dimensional atomic materials, together with strong electron and hole correlations in two-dimensional metal dichalcogenides, make Auger processes particularly effective for carrier capture by defects. We present a model for carrier recombination dynamics that quantitatively explains all features of our data for different temperatures and pump fluences. The theoretical estimates for the rate constants for Auger carrier capture are in good agreement with the experimentally determined values. Our results underscore the important role played by Auger processes in two-dimensional atomic materials.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
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Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Ultrasensitive photodetectors based on monolayer MoS2
Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A., & Kis, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.100 · Cited by 5,043
Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., & Ryu, S. (2010) · ACS Nano · doi:10.1021/nn1003937 · Cited by 4,859
Control of valley polarization in monolayer MoS2 by optical helicity
Mak, K. F., He, K., Shan, J., & Heinz, T. F. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.96 · Cited by 4,034
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
Tightly bound trions in monolayer MoS2
Mak, K. F., He, K., Lee, C., Lee, G. H., Hone, J., Heinz, T. F., & Shan, J. (2013) · Nature Materials · doi:10.1038/nmat3505 · Cited by 2,865
High Performance Multilayer MoS2 Transistors with Scandium Contacts
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Cited by
Near-unity photoluminescence quantum yield in MoS 2
Amani, M., Lien, D.-H., Kiriya, D., Xiao, J., Azcatl, A., Noh, J., Madhvapathy, S. R., Addou, R., KC, S., Dubey, M., et al. (2015) · Science · doi:10.1126/science.aad2114 · Cited by 1,239
Disorder in van der Waals heterostructures of 2D materials
Rhodes, D., Chae, S. H., Ribeiro-Palau, R., & Hone, J. (2019) · Nature Materials · doi:10.1038/s41563-019-0366-8 · Cited by 656
Jiang, L., Wang, A.-D., Li, B., Cui, T.-H., & Lu, Y.-F. (2017) · Light: Science & Applications · doi:10.1038/lsa.2017.134 · Cited by 513
Ouyang, Y., Ling, C., Chen, Q., Wang, Z., Shi, L., & Wang, J. (2016) · Chemistry of Materials · doi:10.1021/acs.chemmater.6b01395 · Cited by 482
Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures
Chen, H., Wen, X., Zhang, J., Wu, T., Gong, Y., Zhang, X., Yuan, J., Yi, C., Lou, J., Ajayan, P. M., et al. (2016) · Nature Communications · doi:10.1038/ncomms12512 · Cited by 432
Metadata
- Authors
- Wang, H., Zhang, C., & Rana, F.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-12-31
- Volume
- 15
- Issue
- 1
- Pages
- 339-345
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2059116268
- Cited by
- 654
- References
- 52
- FWCI
- 18.91
- Type
- journal article
- Language
- en
- Open access
- green
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