The DOI matches its Crossref record; 52 of the 52 references it cites were found in a registry or an index.
Ultrafast Dynamics of Defect-Assisted Electron–Hole Recombination in Monolayer MoS2
Open accessAbstract
In this Letter, we present nondegenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS2 monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons and holes recombine; a fast time scale that lasts ∼ 2 ps and a slow time scale that lasts longer than ∼ 100 ps. The temperature and the pump fluence dependence of the observed carrier dynamics are consistent with defect-assisted recombination as being the dominant mechanism for electron-hole recombination in which the electrons and holes are captured by defects via Auger processes. Strong Coulomb interactions in two-dimensional atomic materials, together with strong electron and hole correlations in two-dimensional metal dichalcogenides, make Auger processes particularly effective for carrier capture by defects. We present a model for carrier recombination dynamics that quantitatively explains all features of our data for different temperatures and pump fluences. The theoretical estimates for the rate constants for Auger carrier capture are in good agreement with the experimentally determined values. Our results underscore the important role played by Auger processes in two-dimensional atomic materials.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Ultrasensitive photodetectors based on monolayer MoS2
Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A., & Kis, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.100 · Cited by 5,043
Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., & Ryu, S. (2010) · ACS Nano · doi:10.1021/nn1003937 · Cited by 4,859
Control of valley polarization in monolayer MoS2 by optical helicity
Mak, K. F., He, K., Shan, J., & Heinz, T. F. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.96 · Cited by 4,034
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
Tightly bound trions in monolayer MoS2
Mak, K. F., He, K., Lee, C., Lee, G. H., Hone, J., Heinz, T. F., & Shan, J. (2013) · Nature Materials · doi:10.1038/nmat3505 · Cited by 2,865
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
Zhou, W., Zou, X., Najmaei, S., Liu, Z., Shi, Y., Kong, J., Lou, J., Ajayan, P. M., Yakobson, B. I., & Idrobo, J.-C. (2013) · Nano Letters · doi:10.1021/nl4007479 · Cited by 2,220
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
van der Zande, A. M., Huang, P. Y., Chenet, D. A., Berkelbach, T. C., You, Y., Lee, G.-H., Heinz, T. F., Reichman, D. R., Muller, D. A., & Hone, J. C. (2013) · Nature Materials · doi:10.1038/nmat3633 · Cited by 2,197
Quantum Theory of the Electron Liquid
Giuliani, G., & Vignale, G. (2005) · Cambridge University Press eBooks · doi:10.1017/cbo9780511619915 · Cited by 1,986
Integrated Circuits Based on Bilayer MoS2 Transistors
Wang, H., Yu, L., Lee, Y.-H., Shi, Y., Hsu, A., Chin, M. L., Li, L.-J., Dubey, M., Kong, J., & Palacios, T. (2012) · Nano Letters · doi:10.1021/nl302015v · Cited by 1,738
Self-citationElectrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
Ross, J. S., Klement, P., Jones, A. M., Ghimire, N. J., Yan, J., Mandrus, D. G., Taniguchi, T., Watanabe, K., Kitamura, K., Yao, W., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.26 · Cited by 1,690
How Good Can Monolayer MoS2 Transistors Be?
Yoon, Y., Ganapathi, K., & Salahuddin, S. (2011) · Nano Letters · doi:10.1021/nl2018178 · Cited by 1,528
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.25 · Cited by 1,523
Quantum Processes in Semiconductors
Ridley, B. K. (2013) · Oxford University Press eBooks · doi:10.1093/acprof:oso/9780199677214.001.0001 · Cited by 1,213
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
Henry, C. H., & Lang, D. V. (1977) · Physical Review B · doi:10.1103/physrevb.15.989 · Cited by 1,208
Hopping transport through defect-induced localized states in molybdenum disulphide
Qiu, H., Xu, T., Wang, Z., Ren, W., Nan, H., Ni, Z., Chen, Q., Yuan, S., Miao, F., Song, F., et al. (2013) · Nature Communications · doi:10.1038/ncomms3642 · Cited by 1,193
Komsa, H.-P., Kotakoski, J., Kurasch, S., Lehtinen, O., Kaiser, U., & Krasheninnikov, A. V. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.035503 · Cited by 1,168
Symmetry-dependent phonon renormalization in monolayer MoS2transistor
Chakraborty, B., Bera, A., Muthu, D. V. S., Bhowmick, S., Waghmare, U. V., & Sood, A. K. (2012) · Physical Review B · doi:10.1103/physrevb.85.161403 · Cited by 1,140
Electroluminescence in Single Layer MoS2
Sundaram, R. S., Engel, M., Lombardo, A., Krupke, R., Ferrari, A. C., Avouris, P., & Steiner, M. (2013) · Nano Letters · doi:10.1021/nl400516a · Cited by 1,007
Theory of neutral and charged excitons in monolayer transition metal dichalcogenides
Berkelbach, T. C., Hybertsen, M. S., & Reichman, D. R. (2013) · Physical Review B · doi:10.1103/physrevb.88.045318 · Cited by 955
Cascade Capture of Electrons in Solids
Lax, M. (1960) · Physical Review · doi:10.1103/physrev.119.1502 · Cited by 901
Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals
Shi, H., Yan, R., Bertolazzi, S., Brivio, J., Gao, B., Kis, A., Jena, D., Xing, H. G., & Huang, L. (2013) · ACS Nano · doi:10.1021/nn303973r · Cited by 839
Ambipolar MoS2 Thin Flake Transistors
Zhang, Y., Ye, J., Matsuhashi, Y., & Iwasa, Y. (2012) · Nano Letters · doi:10.1021/nl2021575 · Cited by 818
Low-temperature photocarrier dynamics in monolayer MoS2
Korn, T., Heydrich, S., Hirmer, M., Schmutzler, J., & Schüller, C. (2011) · Applied Physics Letters · doi:10.1063/1.3636402 · Cited by 777
George, P. A., Strait, J., Dawlaty, J., Shivaraman, S., Chandrashekhar, M., Rana, F., & Spencer, M. G. (2008) · Nano Letters · doi:10.1021/nl8019399 · Cited by 686
Self-citationHigh-mobility field-effect transistors based on transition metal dichalcogenides
Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R., & Bucher, E. (2004) · Applied Physics Letters · doi:10.1063/1.1723695 · Cited by 595
Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible
Dawlaty, J. M., Shivaraman, S., Strait, J., George, P., Chandrashekhar, M., Rana, F., Spencer, M. G., Veksler, D., & Chen, Y. (2008) · Applied Physics Letters · doi:10.1063/1.2990753 · Cited by 547
Self-citationGroße, P. (1969) · Zeitschrift für Physikalische Chemie · doi:10.1524/zpch.1969.63.1_4.217a · Cited by 511
Schnitzer, I., Yablonovitch, E., Caneau, C., & Gmitter, T. J. (1993) · Applied Physics Letters · doi:10.1063/1.109348 · Cited by 428
Sulfur vacancies in monolayer MoS2 and its electrical contacts
Liu, D., Guo, Y., Fang, L., & Robertson, J. (2013) · Applied Physics Letters · doi:10.1063/1.4824893 · Cited by 417
Many-body correlations and excitonic effects in semiconductor spectroscopy
Kira, M., & Koch, S. W. (2006) · Progress in Quantum Electronics · doi:10.1016/j.pquantelec.2006.12.002 · Cited by 416
Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures
Chemla, D. S., & Miller, D. A. B. (1985) · Journal of the Optical Society of America B · doi:10.1364/josab.2.001155 · Cited by 409
Carrier and Polarization Dynamics in MonolayerMoS2
Lagarde, D., Bouet, L., Marie, X., Zhu, C. R., Liu, B. L., Amand, T., Tan, P. H., & Urbaszek, B. (2014) · Physical Review Letters · doi:10.1103/physrevlett.112.047401 · Cited by 406
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
Jariwala, D., Sangwan, V. K., Late, D. J., Johns, J. E., Dravid, V. P., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013) · Applied Physics Letters · doi:10.1063/1.4803920 · Cited by 399
Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gas
Kaindl, R. A., Carnahan, M. A., Hägele, D., Lövenich, R., & Chemla, D. S. (2003) · Nature · doi:10.1038/nature01676 · Cited by 380
Stability and electronic structures of native defects in single-layerMoS2
Noh, J.-Y., Kim, H., & Kim, Y.-S. (2014) · Physical Review B · doi:10.1103/physrevb.89.205417 · Cited by 338
A single evolutionary innovation drives the deep evolution of symbiotic N2-fixation in angiosperms
Werner, G. D. A., Cornwell, W. K., Sprent, J. I., Kattge, J., & Kiers, E. T. (2014) · Nature Communications · doi:10.1038/ncomms5087 · Cited by 289
Zhang, C., Wang, H., Chan, W., Manolatou, C., & Rana, F. (2014) · Physical Review B · doi:10.1103/physrevb.89.205436 · Cited by 283
Self-citationUltrafast relaxation dynamics of hot optical phonons in graphene
Wang, H., Strait, J. H., George, P. A., Shivaraman, S., Shields, V. B., Chandrashekhar, M., Hwang, J., Rana, F., Spencer, M. G., Ruiz-Vargas, C. S., et al. (2010) · Applied Physics Letters · doi:10.1063/1.3291615 · Cited by 267
Self-citationUltrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide
Wang, R., Ruzicka, B. A., Kumar, N., Bellus, M. Z., Chiu, H.-Y., & Zhao, H. (2012) · Physical Review B · doi:10.1103/physrevb.86.045406 · Cited by 255
Recombination in Semiconductors
Landsberg, P. T. (1992) · Cambridge University Press eBooks · doi:10.1017/cbo9780511470769 · Cited by 227
Docherty, C. J., Parkinson, P., Joyce, H. J., Chiu, M.-H., Chen, C.-H., Lee, M.-Y., Li, L.-J., Herz, L. M., & Johnston, M. B. (2014) · ACS Nano · doi:10.1021/nn5034746 · Cited by 223
Exciton dynamics in atomically thin MoS 2 : Interexcitonic interaction and broadening kinetics
Sim, S., Park, J., Song, J.-G., In, C., Lee, Y.-S., Kim, H., & Choi, H. (2013) · Physical Review B · doi:10.1103/physrevb.88.075434 · Cited by 202
Kaindl, R. A., Hägele, D., Carnahan, M. A., & Chemla, D. S. (2009) · Physical Review B · doi:10.1103/physrevb.79.045320 · Cited by 188
Line Defects in Molybdenum Disulfide Layers
Enyashin, A. N., Bar‐Sadan, M., Houben, L., & Seifert, G. (2013) · The Journal of Physical Chemistry C · doi:10.1021/jp403976d · Cited by 145
Effect of point defects on the optical and transport properties of MoS 2 and WS 2
Yuan, S., Roldán, R., Katsnelson, M. I., & Guinea, F. J. E. (2014) · Physical Review B · doi:10.1103/physrevb.90.041402 · Cited by 142
Transient Recombination of Excess Carriers in Semiconductors
Wertheim, G. K. (1958) · Physical Review · doi:10.1103/physrev.109.1086 · Cited by 129
Scanning Tunneling Microscopy Chemical Signature of Point Defects on the MoS2(0001) Surface
Fuhr, J. D., Saúl, A., & Sofo, J. O. (2004) · Physical Review Letters · doi:10.1103/physrevlett.92.026802 · Cited by 116
Cited by
Near-unity photoluminescence quantum yield in MoS 2
Amani, M., Lien, D.-H., Kiriya, D., Xiao, J., Azcatl, A., Noh, J., Madhvapathy, S. R., Addou, R., KC, S., Dubey, M., et al. (2015) · Science · doi:10.1126/science.aad2114 · Cited by 1,239
Disorder in van der Waals heterostructures of 2D materials
Rhodes, D., Chae, S. H., Ribeiro-Palau, R., & Hone, J. (2019) · Nature Materials · doi:10.1038/s41563-019-0366-8 · Cited by 656
Jiang, L., Wang, A.-D., Li, B., Cui, T.-H., & Lu, Y.-F. (2017) · Light: Science & Applications · doi:10.1038/lsa.2017.134 · Cited by 513
Ouyang, Y., Ling, C., Chen, Q., Wang, Z., Shi, L., & Wang, J. (2016) · Chemistry of Materials · doi:10.1021/acs.chemmater.6b01395 · Cited by 482
Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures
Chen, H., Wen, X., Zhang, J., Wu, T., Gong, Y., Zhang, X., Yuan, J., Yi, C., Lou, J., Ajayan, P. M., et al. (2016) · Nature Communications · doi:10.1038/ncomms12512 · Cited by 432
Metadata
- Authors
- Wang, H., Zhang, C., & Rana, F.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-12-31
- Volume
- 15
- Issue
- 1
- Pages
- 339-345
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2059116268
- Cited by
- 654
- References
- 52
- FWCI
- 18.91
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
