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Vertical Heterostructure of Two-Dimensional MoS2 and WSe2 with Vertically Aligned Layers

Yu, Jung Ho, Lee, Hye Ryoung, Hong, Seung Sae, Kong, Desheng, Lee, Hyun-Wook, Wang, Haotian, Xiong, Feng, Wang, Shuang, Cui, Yi·2015·Nano Letters

Abstract

Two-dimensional (2D) layered materials consist of covalently bonded 2D atomic layers stacked by van der Waals interactions. Such anisotropic bonding nature gives rise to the orientation-dependent functionalities of the 2D layered materials. Different from most studies of 2D materials with their atomic layers parallel to substrate, we have recently developed layer vertically aligned 2D material nanofilms. Built on these developments, here, we demonstrate the synthesis of vertical heterostructure of n-type MoS2 and p-type WSe2 with vertically aligned atomic layers. Thin film of MoS2/WSe2 vertical structure was successfully synthesized without significant alloy formation. The heterostructure synthesis is scalable to a large area over 1 cm(2). We demonstrated the pn junction diode behavior of the heterostructure device. This novel device geometry opens up exciting opportunities for a variety of electronic and optoelectronic devices, complementary to the recent interesting vertical heterostructures with horizontal atomic layers.

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Metadata

Authors
Yu, J. H., Lee, H. R., Hong, S. S., Kong, D., Lee, H.-W., Wang, H., Xiong, F., Wang, S., & Cui, Y.
Venue
Nano Letters
Published
2015-01-15
Volume
15
Issue
2
Pages
1031-1035
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2058614868
Cited by
228
References
5
FWCI
14.92
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Vertical Heterostructure of Two-Dimensional MoS2 and WSe2 with Vertically Aligned Layers. https://app.cochat.ai/papers/10.1021/nl503897h
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Yu, J. H., Lee, H. R., Hong, S. S., Kong, D., Lee, H.-W., Wang, H., Xiong, F., Wang, S., & Cui, Y. (2015). Vertical Heterostructure of Two-Dimensional MoS2 and WSe2 with Vertically Aligned Layers. Nano Letters. https://doi.org/10.1021/nl503897h

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