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Cited by 454

The DOI matches its Crossref record; 36 of the 36 references it cites were found in a registry or an index.

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

Open access
Lezama, Ignacio Gutiérrez, Arora, Ashish, Ubaldini, Alberto, Barreteau, Céline, Giannini, Enrico, Potemski, Marek, Morpurgo, Alberto F.·2015·Nano Letters

Abstract

We study the evolution of the band gap structure in few-layer MoTe2 crystals, by means of low-temperature microreflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that in complete analogy with other semiconducting transition metal dichalchogenides (TMDs) the dominant PL emission peaks originate from direct transitions associated with recombination of excitons and trions. When we follow the evolution of the PL intensity as a function of layer thickness, however, we observe that MoTe2 behaves differently from other semiconducting TMDs investigated earlier. Specifically, the exciton PL yield (integrated PL intensity) is identical for mono and bilayer, decreases slightly for trilayer, and it is significantly lower in the tetralayer. The analysis of this behavior and of all our experimental observations is fully consistent with mono and bilayer MoTe2 being direct band gap semiconductors with tetralayer MoTe2 being an indirect gap semiconductor and with trilayers having nearly identical direct and indirect gaps. This conclusion is different from the one reached for other recently investigated semiconducting transition metal dichalcogenides for which monolayers are found to be direct band gap semiconductors, and thicker layers have indirect band gaps that are significantly smaller (by hundreds of meV) than the direct gap. We discuss the relevance of our findings for experiments of fundamental interest and possible future device applications.

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Metadata

Authors
Lezama, I. G., Arora, A., Ubaldini, A., Barreteau, C., Giannini, E., Potemski, M., & Morpurgo, A. F.
Venue
Nano Letters
Published
2015-03-27
Volume
15
Issue
4
Pages
2336-2342
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2063576642
Cited by
454
References
36
FWCI
18.92
Type
journal article
Language
en
Open access
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CoChat. (2026). Citation check: Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2. https://app.cochat.ai/papers/10.1021/nl5045007
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Lezama, I. G., Arora, A., Ubaldini, A., Barreteau, C., Giannini, E., Potemski, M., & Morpurgo, A. F. (2015). Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2. Nano Letters. https://doi.org/10.1021/nl5045007

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