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Terahertz Near-Field Nanoscopy of Mobile Carriers in Single Semiconductor Nanodevices

Huber, A. J., Keilmann, F., Wittborn, J., Aizpurua, J., Hillenbrand, R.·2008·Nano Letters

Abstract

We introduce ultraresolving terahertz (THz) near-field microscopy based on THz scattering at atomic force microscope tips. Nanoscale resolution is achieved by THz field confinement at the very tip apex to within 30 nm, which is in good agreement with full electro-dynamic calculations. Imaging semiconductor transistors, we provide first evidence of 40 nm (lambda/3000) spatial resolution at 2.54 THz (wavelength lambda=118 microm) and demonstrate the simultaneous THz recognition of materials and mobile carriers in a single nanodevice. Fundamentally important, we find that the mobile carrier contrast can be directly related to near-field excitation of THz-plasmons in the doped semiconductor regions. This opens the door to quantitative studies of local carrier concentration and mobility at the nanometer scale. The THz near-field response is extraordinary sensitive, providing contrast from less than 100 mobile electrons in the probed volume. Future improvements could allow for THz characterization of even single electrons or biomolecules.

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Metadata

Authors
Huber, A. J., Keilmann, F., Wittborn, J., Aizpurua, J., & Hillenbrand, R.
Venue
Nano Letters
Published
2008-10-07
Volume
8
Issue
11
Pages
3766-3770
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2130179890
Cited by
576
References
0
FWCI
26.30
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Terahertz Near-Field Nanoscopy of Mobile Carriers in Single Semiconductor Nanodevices. https://app.cochat.ai/papers/10.1021/nl802086x
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Huber, A. J., Keilmann, F., Wittborn, J., Aizpurua, J., & Hillenbrand, R. (2008). Terahertz Near-Field Nanoscopy of Mobile Carriers in Single Semiconductor Nanodevices. Nano Letters. https://doi.org/10.1021/nl802086x

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