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Selective Growth of Well-Aligned Semiconducting Single-Walled Carbon Nanotubes
Abstract
High-density arrays of perfectly aligned single-walled carbon nanotubes (SWNTs) consisting almost exclusively of semiconducting nanotubes were grown on ST-cut single crystal quartz substrates. Raman spectroscopy together with electrical measurements of field effect transistors (FETs) fabricated from the as-grown samples showed that over 95% of the nanotubes in the arrays are semiconducting. The mechanism of selective growth was explored. It is proposed that introducing methanol in the growth process, combined with the interaction between the SWNTs and the quartz lattice, leads to the selective growth of aligned semiconducting nanotubes. Such a high density of horizontally aligned semiconducting SWNTs can be readily used in high current nanoFETs and sensors. This method demonstrates great promise to solve one of the most difficult problems which limits application of carbon nanotubes in nanoelectronicsthe coexistence of metallic and semiconducting nanotubes in samples produced by most, if not all, growth methods.
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Metadata
- Authors
- Ding, L., Tselev, A., Wang, J., Yuan, D., Chu, H., McNicholas, T. P., Li, Y., & Liu, J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2009-01-20
- Volume
- 9
- Issue
- 2
- Pages
- 800-805
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2112448497
- Cited by
- 467
- References
- 0
- FWCI
- 28.55
- Type
- journal article
- Language
- en
- Open access
- closed
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