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Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
Open accessAbstract
Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Cited by
Emerging memories: resistive switching mechanisms and current status
Jeong, D. S., Thomas, R., Katiyar, R. S., Scott, J. F., Kohlstedt, H., Petraru, A., & Hwang, C. S. (2012) · Reports on Progress in Physics · doi:10.1088/0034-4885/75/7/076502 · Cited by 1,106
Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology
Dong, S., Liu, J.-M., Cheong, S.-W., & Ren, Z. (2015) · Advances in Physics · doi:10.1080/00018732.2015.1114338 · Cited by 893
Solid-state memories based on ferroelectric tunnel junctions
Chanthbouala, A., Crassous, A., Garcia, V., Bouzehouane, K., Fusil, S., Moya, X., Allibe, J., Dlubak, B., Grollier, J., Xavier, S., et al. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2011.213 · Cited by 628
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors
Jiang, A. Q., Wang, C., Jin, K. J., Liu, X. B., Scott, J. F., Hwang, C. S., Tang, T. A., Lu, H. B., & Yang, G. Z. (2011) · Advanced Materials · doi:10.1002/adma.201004317 · Cited by 438
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Metadata
- Authors
- Gruverman, A., Wu, D., Lu, H., Wang, Y., Jang, H. W., Folkman, C. M., Zhuravlev, M. Y., Felker, D., Rzchowski, M., Eom, C.-B., & Tsymbal, E. Y.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2009-08-21
- Volume
- 9
- Issue
- 10
- Pages
- 3539-3543
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2009639336
- Cited by
- 603
- References
- 1
- FWCI
- 21.65
- Type
- journal article
- Language
- en
- Open access
- green
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- Gruverman, A., Wu, D., Lu, H., Wang, Y., Jang, H. W., Folkman, C. M., Zhuravlev, M. Y., Felker, D., Rzchowski, M., Eom, C.-B., & Tsymbal, E. Y. (2009). Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale. Nano Letters. https://doi.org/10.1021/nl901754t
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