The DOI matches its Crossref record; 20 of the 20 references it cites were found in a registry or an index.
A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors
Abstract
A ferroelectric-resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure “1” or “0”, and is fully compatible with complementary metal-oxide semiconductor processing.
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Citations
Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Resistive switching in transition metal oxides
Sawa, A. (2008) · Materials Today · doi:10.1016/s1369-7021(08)70119-6 · Cited by 2,948
Multiferroic BaTiO 3 -CoFe 2 O 4 Nanostructures
Zheng, H., Wang, J., Lofland, S. E., Ma, Z., Mohaddes-Ardabili, L., Zhao, T., Salamanca-Riba, L., Shinde, S. R., Ogale, S. B., Bai, F., et al. (2004) · Science · doi:10.1126/science.1094207 · Cited by 2,177
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Self-citationSwitchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3
Choi, T., Lee, S., Choi, Y. J., Kiryukhin, V., & Cheong, S.-W. (2009) · Science · doi:10.1126/science.1168636 · Cited by 1,984
Conduction at domain walls in oxide multiferroics
Seidel, J., Martin, L. W., He, Q., Zhan, Q., Chu, Y.-H., Rother, A., Hawkridge, M. E., Maksymovych, P., Yu, P., Gajek, M., et al. (2009) · Nature Materials · doi:10.1038/nmat2373 · Cited by 1,427
Self-citationScott, J. F. (2000) · Springer Series in Advanced Microelectronics · doi:10.1007/978-3-662-04307-3 · Cited by 1,424
Self-citationElectrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature
Zhao, T., Scholl, A., Zavaliche, F., Lee, K., Barry, M., Doran, A., Cruz, M. P., Chu, Y. H., Ederer, C., Spaldin, N. A., et al. (2006) · Nature Materials · doi:10.1038/nmat1731 · Cited by 1,297
Reproducible switching effect in thin oxide films for memory applications
Beck, A., Bednorz, J. G., Gerber, C., Rossel, C., & Widmer, D. (2000) · Applied Physics Letters · doi:10.1063/1.126902 · Cited by 1,122
Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Metadata
- Authors
- Jiang, A. Q., Wang, C., Jin, K. J., Liu, X. B., Scott, J. F., Hwang, C. S., Tang, T. A., Lu, H. B., & Yang, G. Z.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2011-01-31
- Volume
- 23
- Issue
- 10
- Pages
- 1277-1281
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2082622134
- Cited by
- 438
- References
- 20
- FWCI
- 26.29
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jiang, A. Q., Wang, C., Jin, K. J., Liu, X. B., Scott, J. F., Hwang, C. S., Tang, T. A., Lu, H. B., & Yang, G. Z. (2011). A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors. Advanced Materials. https://doi.org/10.1002/adma.201004317
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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