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Cited by 1,129

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Wafer-Scale Synthesis and Transfer of Graphene Films

Open access
Lee, Youngbin, Bae, Sukang, Jang, Houk, Jang, Sukjae, Zhu, Shou-En, Sim, Sung Hyun, Song, Young Il, Hong, Byung Hee, Ahn, Jong-Hyun·2010·Nano Letters

Abstract

We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was approximately 6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

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Metadata

Authors
Lee, Y., Bae, S., Jang, H., Jang, S., Zhu, S.-E., Sim, S. H., Song, Y. I., Hong, B. H., & Ahn, J.-H.
Venue
Nano Letters
Published
2010-01-04
Volume
10
Issue
2
Pages
490-493
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2149032140
Cited by
1,129
References
3
FWCI
49.58
Type
journal article
Language
en
Open access
green

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