The DOI matches its Crossref record; 26 of the 26 references it cites were found in a registry or an index.
Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire
Abstract
Epitaxial chemical vapor deposition (CVD) growth of uniform single-layer graphene is demonstrated over Co film crystallized on c-plane sapphire. The single crystalline Co film is realized on the sapphire substrate by optimized high-temperature sputtering and successive H(2) annealing. This crystalline Co film enables the formation of uniform single-layer graphene, while a polycrystalline Co film deposited on a SiO(2)/Si substrate gives a number of graphene flakes with various thicknesses. Moreover, an epitaxial relationship between the as-grown graphene and Co lattice is observed when synthesis occurs at 1000 °C; the direction of the hexagonal lattice of the single-layer graphene completely matches with that of the underneath Co/sapphire substrate. The orientation of graphene depends on the growth temperature and, at 900 °C, the graphene lattice is rotated at 22 ± 8° with respect to the Co lattice direction. Our work expands a possibility of synthesizing single-layer graphene over various metal catalysts. Moreover, our CVD growth gives a graphene film with predefined orientation, and thus can be applied to graphene engineering, such as cutting along a specific crystallographic direction, for future electronics applications.
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Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
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Graphene synthesis: relationship to applications
Edwards, R. S., & Coleman, K. S. (2013) · Nanoscale · doi:10.1039/c2nr32629a · Cited by 773
Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition
Wang, X., Feng, H., Wu, Y., & Jiao, L. (2013) · Journal of the American Chemical Society · doi:10.1021/ja4013485 · Cited by 748
Metadata
- Authors
- Ago, H., Ito, Y., Mizuta, N., Yoshida, K., Hu, B., Orofeo, C. M., Tsuji, M., Ikeda, K.-I., & Mizuno, S.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-11-24
- Volume
- 4
- Issue
- 12
- Pages
- 7407-7414
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2057848305
- Cited by
- 305
- References
- 26
- FWCI
- 9.73
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ago, H., Ito, Y., Mizuta, N., Yoshida, K., Hu, B., Orofeo, C. M., Tsuji, M., Ikeda, K.-I., & Mizuno, S. (2010). Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire. ACS Nano. https://doi.org/10.1021/nn102519b
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