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Controlled 3D Buckling of Silicon Nanowires for Stretchable Electronics

Xu, Feng, Lu, Wei, Zhu, Yong·2011·ACS Nano

Abstract

Silicon (Si) nanowire (NW) coils were fabricated on elastomeric substrates by a controlled buckling process. Si NWs were first transferred onto prestrained and ultraviolet/ozone (UVO)-treated poly(dimethylsiloxane) (PDMS) substrates and buckled upon release of the prestrain. Two buckling modes (the in-plane wavy mode and the three-dimensional coiled mode) were found; a transition between them was achieved by controlling the UVO treatment of PDMS. Structural characterization revealed that the NW coils were oval-shaped. The oval-shaped NW coils exhibited very large stretchability up to the failure strain of PDMS (∼104% in our study). Such a large stretchability relies on the effectiveness of the coil shape in mitigating the maximum local strain, with a mechanics that is similar to the motion of a coil spring. Single NW devices based on coiled NWs were demonstrated with a nearly constant electrical response in a large strain range. In addition to the wavy shape, the coil shape represents an effective architecture in accommodating large tension, compression, bending, and twist, which may find important applications for stretchable electronics and other stretchable technologies.

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Metadata

Authors
Xu, F., Lu, W., & Zhu, Y.
Venue
ACS Nano
Published
2010-12-28
Volume
5
Issue
1
Pages
672-678
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2041802248
Cited by
210
References
1
FWCI
5.46
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Controlled 3D Buckling of Silicon Nanowires for Stretchable Electronics. https://app.cochat.ai/papers/10.1021/nn103189z
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Xu, F., Lu, W., & Zhu, Y. (2011). Controlled 3D Buckling of Silicon Nanowires for Stretchable Electronics. ACS Nano. https://doi.org/10.1021/nn103189z

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