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Cited by 3,493

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Single-Layer MoS2Phototransistors

Open access
Yin, Zongyou, Li, Hai, Li, Hong, Jiang, Lin, Shi, Yumeng, Sun, Yinghui, Lu, Gang, Zhang, Qing, Chen, Xiaodong, Zhang, Hua·2012·ACS Nano

Abstract

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

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Crossref · 10.1021/nn2024557

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Metadata

Authors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H.
Venue
ACS Nano
Published
2011-12-21
Volume
6
Issue
1
Pages
74-80
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W1905458101
Cited by
3,493
References
3
FWCI
75.76
Type
journal article
Language
en
Open access
green

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