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Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Open accessAbstract
We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states in all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below ∼30 K, the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Photoluminescence from Chemically Exfoliated MoS 2
Eda, G., Yamaguchi, H., Voiry, D., Fujita, T., Chen, M., & Chhowalla, M. (2011) · Nano Letters · doi:10.1021/nl201874w · Cited by 3,896
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Metal dichalcogenide nanosheets: preparation, properties and applications
Huang, X., Zeng, Z., & Zhang, H. (2013) · Chemical Society Reviews · doi:10.1039/c2cs35387c · Cited by 2,030
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
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Metadata
- Authors
- Ghatak, S., Pal, A. N., & Ghosh, A.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-09-19
- Volume
- 5
- Issue
- 10
- Pages
- 7707-7712
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2102122128
- Cited by
- 865
- References
- 2
- FWCI
- 24.01
- Type
- journal article
- Language
- en
- Open access
- green
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