The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics
Abstract
A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm(2)/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.
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Cites
Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers
Mannsfeld, S. C. B., Tee, B. C.-K., Stoltenberg, R. M., Chen, C. V. H.-H., Barman, S., Muir, B. V. O., Sokolov, A. N., Reese, C., & Bao, Z. (2010) · Nature Materials · doi:10.1038/nmat2834 · Cited by 3,291
Flexible organic transistors and circuits with extreme bending stability
Sekitani, T., Zschieschang, U., Klauk, H., & Someya, T. (2010) · Nature Materials · doi:10.1038/nmat2896 · Cited by 1,253
Cited by
Stretchable Self-Healing Polymeric Dielectrics Cross-Linked Through Metal–Ligand Coordination
Rao, Y.-L., Chortos, A., Pfattner, R., Lissel, F., Chiu, Y.-C., Feig, V., Xu, J., Kurosawa, T., Gu, X., Wang, C., et al. (2016) · Journal of the American Chemical Society · doi:10.1021/jacs.6b02428 · Cited by 612
Mimicking Human and Biological Skins for Multifunctional Skin Electronics
Lee, Y., Park, J., Choe, A., Cho, S., Kim, J., & Ko, H. (2020) · Advanced Functional Materials · doi:10.1002/adfm.201904523 · Cited by 465
Suk, J. W., Lee, W. H., Lee, J., Chou, H., Piner, R. D., Hao, Y., Akinwande, D., & Ruoff, R. S. (2013) · Nano Letters · doi:10.1021/nl304420b · Cited by 385
2D Materials in Flexible Electronics: Recent Advances and Future Prospectives
Katiyar, A. K., Hoang, A. T., Xu, D., Hong, J., Kim, B. J., Ji, S., & Ahn, J.-H. (2024) · Chemical Reviews · doi:10.1021/acs.chemrev.3c00302 · Cited by 363
Bao, C., Jiang, Y., Zhang, H., Lu, X., & Sun, J. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201800560 · Cited by 266
Metadata
- Authors
- Lu, C.-C., Lin, Y.-C., Yeh, C.-H., Huang, J.-C., & Chiu, P.-W.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-04-18
- Volume
- 6
- Issue
- 5
- Pages
- 4469-4474
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2334496251
- Cited by
- 185
- References
- 2
- FWCI
- 6.23
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
