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Kinetic Control of Catalytic CVD for High-Quality Graphene at Low Temperatures

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Weatherup, Robert S., Dlubak, Bruno, Hofmann, Stephan·2012·ACS Nano

Abstract

Low-temperature (∼600 °C), scalable chemical vapor deposition of high-quality, uniform monolayer graphene is demonstrated with a mapped Raman 2D/G ratio of >3.2, D/G ratio ≤0.08, and carrier mobilities of ≥3000 cm(2) V(-1) s(-1) on SiO(2) support. A kinetic growth model for graphene CVD based on flux balances is established, which is well supported by a systematic study of Ni-based polycrystalline catalysts. A finite carbon solubility of the catalyst is thereby a key advantage, as it allows the catalyst bulk to act as a mediating carbon sink while optimized graphene growth occurs by only locally saturating the catalyst surface with carbon. This also enables a route to the controlled formation of Bernal stacked bi- and few-layered graphene. The model is relevant to all catalyst materials and can readily serve as a general process rationale for optimized graphene CVD.

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Metadata

Authors
Weatherup, R. S., Dlubak, B., & Hofmann, S.
Venue
ACS Nano
Published
2012-10-08
Volume
6
Issue
11
Pages
9996-10003
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2313904202
Cited by
176
References
0
FWCI
8.11
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Kinetic Control of Catalytic CVD for High-Quality Graphene at Low Temperatures. https://app.cochat.ai/papers/10.1021/nn303674g
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Weatherup, R. S., Dlubak, B., & Hofmann, S. (2012). Kinetic Control of Catalytic CVD for High-Quality Graphene at Low Temperatures. ACS Nano. https://doi.org/10.1021/nn303674g

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.