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Cited by 297

The DOI matches its Crossref record; 52 of the 52 references it cites were found in a registry or an index.

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

Open access
Lu, Yu-Fen, Lo, Shun-Tsung, Lin, Jheng-Cyuan, Zhang, Wenjing, Lu, Jing-Yu, Liu, Fan-Hung, Tseng, Chuan-Ming, Lee, Yi-Hsien, Liang, Chi-Te, Li, Lain-Jong·2013·ACS Nano

Abstract

A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However, reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1,3,5-triazine on Cu metal catalyst. When reducing the growth temperature, the atomic percentage of nitrogen doping is raised from 2.1% to 5.6%. With increasing doping concentration, N-doped graphene sheet exhibits a crossover from p-type to n-type behavior accompanied by a strong enhancement of electron-hole transport asymmetry, manifesting the influence of incorporated nitrogen impurities. In addition, by analyzing the data of X-ray photoelectron spectroscopy, Raman spectroscopy, and electrical measurements, we show that pyridinic and pyrrolic N impurities play an important role in determining the transport behavior of carriers in our N-doped graphene sheets.

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Research works printed but not linked: 2

  1. Mucciolo E. R., 2010, J. Phys.: Condens. Matter, 22, 273201
  2. Schubert G., 2012, Phys. Rev. Lett., 108, 066402, 10.1103/PhysRevLett.108.066402 · doi:10.1103/physrevlett.108.066402

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Metadata

Authors
Lu, Y.-F., Lo, S.-T., Lin, J.-C., Zhang, W., Lu, J.-Y., Liu, F.-H., Tseng, C.-M., Lee, Y.-H., Liang, C.-T., & Li, L.-J.
Venue
ACS Nano
Published
2013-07-30
Volume
7
Issue
8
Pages
6522-6532
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W1995209666
Cited by
297
References
52
FWCI
14.36
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport. https://app.cochat.ai/papers/10.1021/nn402102y
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Lu, Y.-F., Lo, S.-T., Lin, J.-C., Zhang, W., Lu, J.-Y., Liu, F.-H., Tseng, C.-M., Lee, Y.-H., Liang, C.-T., & Li, L.-J. (2013). Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport. ACS Nano. https://doi.org/10.1021/nn402102y

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