The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
Open accessAbstract
We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high-temperature annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the defect engineering and oxygen bonding could be easily realized by mild oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two-dimensional semiconductors. The strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices.
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Cites
Special points for Brillouin-zone integrations
Monkhorst, H. J., & Pack, J. D. (1976) · Physical Review B · doi:10.1103/physrevb.13.5188 · Cited by 71,721
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Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Sangwan, V. K., Jariwala, D., Kim, I. S., Chen, K.-S., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.56 · Cited by 709
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides
Chow, P. K., Jacobs-Gedrim, R. B., Gao, J., Lu, T.-M., Yu, B., Terrones, H., & Koratkar, N. (2015) · ACS Nano · doi:10.1021/nn5073495 · Cited by 482
High Surface Area MoS 2 /Graphene Hybrid Aerogel for Ultrasensitive NO 2 Detection
Long, H., Harley‐Trochimczyk, A., Pham, T., Tang, Z., Shi, T., Zettl, A., Carraro, C., Worsley, M. A., & Maboudian, R. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201601562 · Cited by 479
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Metadata
- Authors
- Nan, H., Wang, Z., Wang, W., Liang, Z., Lu, Y., Chen, Q., He, D., Tan, P., Miao, F., Wang, X., Wang, J., & Ni, Z.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-05-20
- Volume
- 8
- Issue
- 6
- Pages
- 5738-5745
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W1978566690
- Cited by
- 1,244
- References
- 1
- FWCI
- 35.89
- Type
- journal article
- Language
- en
- Open access
- green
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