The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Electron-Doping-Enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate
Abstract
We report effective and stable electron doping of monolayer molybdenum disulfide (MoS2) by cesium carbonate (Cs2CO3) surface functionalization. The electron charge carrier concentration in exfoliated monolayer MoS2 can be increased by about 9 times after Cs2CO3 functionalization. The n-type doping effect was evaluated by in situ transport measurements of MoS2 field-effect transistors (FETs) and further corroborated by in situ ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering measurements. The electron doping enhances the formation of negative trions (i.e., a quasiparticle comprising two electrons and one hole) in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron-hole pairs. This results in large photoluminescence suppression and an obvious photocurrent enhancement in monolayer MoS2 FETs.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Self-citationKibsgaard, J., Chen, Z., Reinecke, B. N., & Jaramillo, T. F. (2012) · Nature Materials · doi:10.1038/nmat3439 · Cited by 3,234
Photocatalytic H2 Evolution on MoS2/CdS Catalysts under Visible Light Irradiation
Zong, X., Wu, G., Yan, H., Ma, G., Shi, J., Wen, F., Wang, L., & Li, C. (2010) · The Journal of Physical Chemistry C · doi:10.1021/jp904350e · Cited by 408
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Recent Advances in Two-Dimensional Materials beyond Graphene
Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
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Self-citationSchmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
Nipane, A., Karmakar, D., Kaushik, N., Karande, S., & Lodha, S. (2016) · ACS Nano · doi:10.1021/acsnano.5b06529 · Cited by 398
Doping engineering and functionalization of two-dimensional metal chalcogenides
Luo, P., Zhuge, F., Zhang, Q., Chen, Y., Lv, L., Huang, Y., Li, H., & Zhai, T. (2019) · Nanoscale Horizons · doi:10.1039/c8nh00150b · Cited by 339
Atomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
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Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C. (2016) · ACS Nano · doi:10.1021/acsnano.6b01091 · Cited by 283
Chakravarty, D., & Late, D. J. (2015) · RSC Advances · doi:10.1039/c4ra12599a · Cited by 98
Metadata
- Authors
- Lin, J. D., Han, C., Wang, F., Wang, R., Xiang, D., Qin, S., Zhang, X.-A., Wang, L., Zhang, H., Wee, A. T. S., & Chen, W.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-05-01
- Volume
- 8
- Issue
- 5
- Pages
- 5323-5329
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2318439217
- Cited by
- 249
- References
- 4
- FWCI
- 12.36
- Type
- journal article
- Language
- en
- Open access
- closed
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