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Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments
Abstract
MoOx shows promising potential as an efficient hole injection layer for p-FETs based on transition metal dichalcogenides. A combination of experiment and theory is used to study the surface and interfacial chemistry, as well as the band alignments for MoOx/MoS2 and MoOx/WSe2 heterostructures, using photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. A Mo(5+) rich interface region is identified and is proposed to explain the similar low hole Schottky barriers reported in a recent device study utilizing MoOx contacts on MoS2 and WSe2.
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Cited by
Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals
Li, S., Wang, S., Tang, D.-M., Zhao, W., Xu, H., Chu, L., Bando, Y., Golberg, D., & Eda, G. (2015) · Applied Materials Today · doi:10.1016/j.apmt.2015.09.001 · Cited by 465
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Lin, Y.-C., Ghosh, R. K., Addou, R., Lu, N., Eichfeld, S. M., Zhu, H., Li, M.-Y., Peng, X., Kim, M. J., Li, L.-J., et al. (2015) · Nature Communications · doi:10.1038/ncomms8311 · Cited by 461
Self-citationSamadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Doping engineering and functionalization of two-dimensional metal chalcogenides
Luo, P., Zhuge, F., Zhang, Q., Chen, Y., Lv, L., Huang, Y., Li, H., & Zhai, T. (2019) · Nanoscale Horizons · doi:10.1039/c8nh00150b · Cited by 339
Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
Yamamoto, M., Dutta, S., Aikawa, S., Nakaharai, S., Wakabayashi, K., Fuhrer, M. S., Ueno, K., & Tsukagoshi, K. (2015) · Nano Letters · doi:10.1021/nl5049753 · Cited by 258
Metadata
- Authors
- McDonnell, S., Azcatl, A., Addou, R., Gong, C., Battaglia, C., Chuang, S., Cho, K., Javey, A., & Wallace, R. M.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-05-09
- Volume
- 8
- Issue
- 6
- Pages
- 6265-6272
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2324839689
- Cited by
- 197
- References
- 0
- FWCI
- 10.87
- Type
- journal article
- Language
- en
- Open access
- closed
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- McDonnell, S., Azcatl, A., Addou, R., Gong, C., Battaglia, C., Chuang, S., Cho, K., Javey, A., & Wallace, R. M. (2014). Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments. ACS Nano. https://doi.org/10.1021/nn501728w
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