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Spectroscopic Signatures for Interlayer Coupling in MoS2–WSe2 van der Waals Stacking
Abstract
Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 °C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(2)1g for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E″ for MoS2 at 286 cm(-1) and A(2)1g for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.
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Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
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Self-citationSchaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652
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Li, M.-Y., Shi, Y., Cheng, C.-C., Lu, L.-S., Lin, Y.-C., Tang, H.-L., Tsai, M.-L., Chu, C.-W., Wei, K.-H., He, J.-H., et al. (2015) · Science · doi:10.1126/science.aab4097 · Cited by 1,203
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Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
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Metadata
- Authors
- Chiu, M.-H., Li, M.-Y., Zhang, W., Hsu, W.-T., Chang, W.-H., Terrones, M., Terrones, H., & Li, L.-J.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-09-10
- Volume
- 8
- Issue
- 9
- Pages
- 9649-9656
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2132864807
- Cited by
- 333
- References
- 2
- FWCI
- 13.70
- Type
- journal article
- Language
- en
- Open access
- closed
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