The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Observation of Excitonic Fine Structure in a 2D Transition-Metal Dichalcogenide Semiconductor
Abstract
Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenide monolayers (TMD 1Ls), have attracted increasing attention owing to the underlying fundamental physics (e.g., many body effects) and the promising optoelectronic applications such as light-emitting diodes. Though much progress has been made, intrinsic excitonic states of TMD 1Ls are still highly debated in theory, which thirsts for direct experimental determination. Here, we report unconventional emission and excitonic fine structure in 1L WS2 revealed by electrical doping and photoexcitation, which reflects the interplay of exciton, trion, and other excitonic states. Tunable excitonic emission has been realized in a controllable manner via electrical and/or optical injection of charge carriers. Remarkably enough, the superlinear (i.e., quadratic) emission is unambiguously observed which is attributed to biexciton states, indicating the strong Coulomb interactions in such a 2D material. In a nearly neutral 1L WS2, trions and biexcitons possess large binding energies of ∼ 10-15 and 45 meV, respectively. Moreover, our finding of electrically induced robust emission opens up a possibility to boost the luminous efficiency of emerging 1L TMD light emitting diodes.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Cited by
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
Mak, K. F., & Shan, J. (2016) · Nature Photonics · doi:10.1038/nphoton.2015.282 · Cited by 3,819
Schaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652
Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors
Gao, J., Kim, Y. D., Liang, L., Idrobo, J. C., Chow, P., Tan, J., Li, B., Li, L., Sumpter, B. G., Lu, T., et al. (2016) · Advanced Materials · doi:10.1002/adma.201601104 · Cited by 267
Room-Temperature 2D Semiconductor Activated Vertical-Cavity Surface-Emitting Lasers
Shang, J., Cong, C., Wang, Z., Peimyoo, N., Wu, L., Zou, C., Chen, Y., Chin, X. Y., Wang, J., Soci, C., et al. (2017) · Nature Communications · doi:10.1038/s41467-017-00743-w · Cited by 145
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Metadata
- Authors
- Shang, J., Shen, X., Cong, C., Peimyoo, N., Cao, B., Eginligil, M., & Yu, T.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-01-12
- Volume
- 9
- Issue
- 1
- Pages
- 647-655
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2114121260
- Cited by
- 381
- References
- 2
- FWCI
- 18.52
- Type
- journal article
- Language
- en
- Open access
- closed
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