The DOI matches its Crossref record; 48 of the 48 references it cites were found in a registry or an index.
Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors
Open accessAbstract
Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Special points for Brillouin-zone integrations
Monkhorst, H. J., & Pack, J. D. (1976) · Physical Review B · doi:10.1103/physrevb.13.5188 · Cited by 71,721
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Biesinger, M. C., Lau, L. W. M., Gerson, A. R., & Smart, R. S. C. (2010) · Applied Surface Science · doi:10.1016/j.apsusc.2010.07.086 · Cited by 4,592
Control of valley polarization in monolayer MoS2 by optical helicity
Mak, K. F., He, K., Shan, J., & Heinz, T. F. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.96 · Cited by 4,034
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104798 · Cited by 3,422
Self-citationTightly bound trions in monolayer MoS2
Mak, K. F., He, K., Lee, C., Lee, G. H., Hone, J., Heinz, T. F., & Shan, J. (2013) · Nature Materials · doi:10.1038/nmat3505 · Cited by 2,865
Self-citationExciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
Chernikov, A., Berkelbach, T. C., Hill, H. M., Rigosi, A., Li, Y., Aslan, B., Reichman, D. R., Hybertsen, M. S., & Heinz, T. F. (2014) · Physical Review Letters · doi:10.1103/physrevlett.113.076802 · Cited by 2,546
Atomically thin p–n junctions with van der Waals heterointerfaces
Lee, C.-H., Lee, G.-H., van der Zande, A. M., Chen, W., Li, Y., Han, M., Cui, X., Arefe, G., Nuckolls, C., Heinz, T. F., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.150 · Cited by 2,303
Self-citationGrains and grain boundaries in highly crystalline monolayer molybdenum disulphide
van der Zande, A. M., Huang, P. Y., Chenet, D. A., Berkelbach, T. C., You, Y., Lee, G.-H., Heinz, T. F., Reichman, D. R., Muller, D. A., & Hone, J. C. (2013) · Nature Materials · doi:10.1038/nmat3633 · Cited by 2,197
Self-citationUgeda, M. M., Bradley, A. J., Shi, S.-F., da Jornada, F. H., Zhang, Y., Qiu, D. Y., Ruan, W., Mo, S.-K., Hussain, Z., Shen, Z.-X., et al. (2014) · Nature Materials · doi:10.1038/nmat4061 · Cited by 1,866
Cited by
Zhang, T., Fujisawa, K., Zhang, F., Liu, M., Lucking, M. C., Gontijo, R. N., Lei, Y., Liu, H., Crust, K., Granzier-Nakajima, T., et al. (2020) · ACS Nano · doi:10.1021/acsnano.9b09857 · Cited by 172
Metadata
- Authors
- Gao, J., Kim, Y. D., Liang, L., Idrobo, J. C., Chow, P., Tan, J., Li, B., Li, L., Sumpter, B. G., Lu, T., Meunier, V., Hone, J., & Koratkar, N.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2016-09-20
- Volume
- 28
- Issue
- 44
- Pages
- 9735-9743
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2523274166
- Cited by
- 267
- References
- 48
- FWCI
- 8.29
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors. https://app.cochat.ai/papers/10.1002/adma.201601104
- The paper
- Gao, J., Kim, Y. D., Liang, L., Idrobo, J. C., Chow, P., Tan, J., Li, B., Li, L., Sumpter, B. G., Lu, T., Meunier, V., Hone, J., & Koratkar, N. (2016). Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors. Advanced Materials. https://doi.org/10.1002/adma.201601104
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
